IRFP264N International Rectifier, IRFP264N Datasheet

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IRFP264N

Manufacturer Part Number
IRFP264N
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP264NPBF
Manufacturer:
IR
Quantity:
20 000
www.DataSheet4U.com
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
CS
JA
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
D
S
Max.
170
380
± 20
520
2.6
8.7
44
31
25
38
IRFP264N
®
R
Power MOSFET
V
DS(on)
Max.
0.39
TO-247AC
–––
40
DSS
I
D
= 44A
= 250V
PD - 94214
= 60m
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
5/4/01

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IRFP264N Summary of contents

Page 1

... JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com G Parameter @ 10V GS @ 10V GS 300 (1.6mm from case ) Parameter Typ. ––– 0.24 ––– 94214 IRFP264N ® HEXFET Power MOSFET 250V DSS R = 60m DS(on 44A D S TO-247AC Max. Units ...

Page 2

... IRFP264N Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...

Page 3

... PULSE WIDTH ° 100 Fig 2. Typical Output Characteristics ° J ° 175 50V DS 20µs PULSE WIDTH 7.0 8.0 9.0 10.0 IRFP264N VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH ° 175 Drain-to-Source Voltage ( ...

Page 4

... IRFP264N 8000 6000 Ciss 4000 Coss 2000 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 0.1 0.2 0.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 0V MHZ C iss = ...

Page 5

... Fig 10a. Switching Time Test Circuit V DS 90% 100 125 150 175 ° 10 Fig 10b. Switching Time Waveforms SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 t , Rectangular Pulse Duration (sec) 1 IRFP264N D.U. Pulse Width µs Duty Factor t ...

Page 6

... IRFP264N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 1000 1 5V 800 600 - ...

Page 7

... Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. V Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Inductor Curent Ripple 5% *** V = 5.0V for Logic Level and 3V Drive Devices GS Fig 14. For N-channel HEXFET IRFP264N - + + P. Period [ ] *** V =10V ® power MOSFETs 7 ...

Page 8

... IRFP264N TO-247AC Package Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) 20.30 (.800) 19.70 (.775) 1 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X TO-247AC Part Marking Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 3.65 (.143) 3.55 (.140) 0.25 (.010 ...

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