IRFP2907B International Rectifier, IRFP2907B Datasheet

IRFP2907B

Manufacturer Part Number

IRFP2907B

Description

HEXFET Power MOSFET Die in Wafer Form

Manufacturer

International Rectifier

Datasheet

1.IRFP2907B.pdf (1 pages)

Current page: 1 of 1
Download datasheet (48Kb)

www.DataSheet4U.com

HEXFET

Electrical Characteristics *

Die Outline

* Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in

** Contact factory for these product forms.

***The typical R

Mechanical Data

Parameter

www.irf.com

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer Thickness:

Relevant Die Mechanical Drawing Number

Minimum Street Width

Reject Ink Dot Size

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Packaged Part

DSS

GSS

STG

(BR)DSS

DS(on)***

GS(th)

die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.

Sawn on Film and Gel Pack**

dimensions.

100% Tested at Probe

Available in Tape and Reel, Chip Pack,

Ultra Low On-Resistance

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Operating Junction and

Storage Temperature Range

0.508

[.020]

DS(on)

Power MOSFET Die in Wafer Form

SOURCE

is an estimated value for the bare die, actual results will depend on customer packaging materials and

[.257]

GAT E

6.53

Description

SOURCE

0.508

[.020]

[.360]

9.14

Min

75V

–––

2.0

-55°C to 175°C Max.

Typ.

2.5m

–––

NOT ES :

Cr-NiV-Ag ( 1kA°-2kA°-5kA° )

100% Al (0.008 mm)

.257" x .360" [ 6.53 mm x 9.14 mm ]

150 mm, with 100 flat

0.254 mm ± 0.025 mm

01-5403

0.107 mm

0.51 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

IRFP2907

1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ].

2. CONT ROL L ING DIMENS ION: [INCH].

3. LET T ER DES IGNAT ION:

4. DIMENS IONAL T OL ERANCES:

5. UNL ES S OT HERWIS E NOT ED AL L DIE ARE GEN III

± 200nA V

Max

4.5m

S = S OURCE

G = GAT E

20µA

4.0V

B ONDING PADS :

OVERALL DIE:

–––

WIDTH

L ENGT H

WIDTH

L ENGT H

S K = S OURCE KELVIN

IS = CURRENT S ENS E

IRFC2907B

< 0.635 T OLERANCE = + /- 0.013

< [.0250] T OLERANCE = + /- [.0005]

> 0.635 T OLERANCE = + /- 0.025

> [.0250] T OLERANCE = + /- [.0010]

< 1.270 T OLERANCE = + /- 0.102

< [.050] T OL ERANCE = + /- [.004]

> 1.270 T OLERANCE = + /- 0.203

> [.050] T OL ERANCE = + /- [.008]

Test Conditions

= V

= 75V, V

= ±20V

= 0V, I

= 10V, I

, I

DS(on)

E = EMITT ER

6" Wafer

= 250µA

typ.)

= 110A

75V

= 0V, T

= 2.5m

PD - 93777

= 25°C

10/4/00

Related parts for IRFP2907B

Related keywords

IRFP2907B datasheet
IRFP2907B data sheet
IRFP2907B pdf datasheet
IRFP2907B component
IRFP2907B part
IRFP2907B distributor
IRFP2907B RoHS
IRFP2907B datasheet download