IRFP9150 INTERSIL, IRFP9150 Datasheet

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IRFP9150

Manufacturer Part Number
IRFP9150
Description
P-Channel Power MOSFET
Manufacturer
INTERSIL
Datasheet

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25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.
Formerly developmental type TA49230.
Ordering Information
NOTE: When ordering, use the entire part number.
Packaging
IRFP9150
PART NUMBER
TO-247
PACKAGE
4-63
Data Sheet
(FLANGE)
IRFP9150
DRAIN
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
BRAND
JEDEC STYLE TO-247
http://www.intersil.com or 407-727-9207
Features
• 25A, 100V
• r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
DS(ON)
SOURCE
DRAIN
August 1999
= 0.150
GATE
G
|
Copyright
File Number 2293.4
D
S
©
IRFP9150
Intersil Corporation 1999

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IRFP9150 Summary of contents

Page 1

... These types can be operated directly from integrated circuits. The P-Channel IRFP9150 is an approximate electrical complement to the N-channel IRFP150. Formerly developmental type TA49230. Ordering Information ...

Page 2

... Measured From the Drain D Lead, 6mm (0.25in) From the Package to the Center of the Die L Measured From the Source S Pin, 6mm (0.25in) From Header to the Source Bonding Pad Free Air Operation JA IRFP9150 -100 DS -100 DGR -25 D -18 D -100 150 D 1.2 1300 ...

Page 3

... FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10 DUTY CYCLE IN DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 1 0.01 0.10 SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-65 IRFP9150 SYMBOL TEST CONDITIONS I Modified MOSFET Symbol SD Showing the Integral Re- I SDM verse P-N Junction Diode -25A (Figure 13 ...

Page 4

... I , DRAIN CURRENT (A) D FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-66 IRFP9150 Unless Otherwise Specified (Continued) -100 -80 10ms -60 100ms -40 0.1s -20 1s IRFP9150 DC IRFP9151 100 -100 V = 10V - -0.1 ...

Page 5

... DUTY CYCLE = 0.5% MAX -10 -20 - DRAIN CURRENT (A) D FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-67 IRFP9150 Unless Otherwise Specified (Continued) 4500 4000 3500 3000 2500 2000 1500 1000 500 80 120 160 o C) FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ...

Page 6

... FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT DUT FIGURE 17. SWITCHING TIME TEST CIRCUIT CURRENT REGULATOR 12V 0.2 F 50k BATTERY 0 g(REF) I CURRENT G SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-68 IRFP9150 DUT 0.01 FIGURE 16. UNCLAMPED ENERGY WAVEFORMS ...

Page 7

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 4-69 IRFP9150 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd ...

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