2SK65 Panasonic Semiconductor, 2SK65 Datasheet
2SK65
Manufacturer Part Number
2SK65
Description
For Impedance Conversion In Low Frequency
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK65.pdf
(3 pages)
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Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I Features
G Diode is connected between gate and source
G Low noise voltage
I Absolute Maximum Ratings
I Electrical Characteristics
*
∆| G
I
Drain to Source voltage
Gate to Drain voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
DSS
V1
I
rank classification and G
G
G
DSS
Runk
V1
V2
− G
(mA)
(dB)
(dB)
Parameter
Parameter
V2
| (dB)
0.04 to 0.2
> −13
> −12
< 3
P
V
value
V
V
I
I
I
P
T
T
I
g
NV
G
G
G
Symbol
Symbol
DSO
DGO
GSO
DSS
(Ta = 25°C)
m
D
opr
stg
DSO
GDO
V1
V2
V3
0.15 to 0.8
*
*
*
*
> −12
> −11
(Ta = 25°C)
< 3
Q
V
V
R
V
C
V
C
V
C
V
C
−20 to +150
−10 to +70
DS
S
G
G
G
G
DS
DS
DS
DS
DS
Ratings
= 2.2kΩ ± 1%, f = 1kHz
= 10pF, A-curve
= 10pF, e
= 10pF, e
= 10pF, e
= 4.5V, V
= 4.5V, V
= 4.5V, R
= 4.5V, R
= 12V, R
= 1V, R
−12
12
20
2
2
2
Note) The part number in the parenthesis shows conventional part number.
Conditions
S
G
G
G
GS
S
= 2.2kΩ ± 1%
S
S
GS
= 100mV, f = 70Hz
= 100mV, f = 70Hz
= 100mV, f = 70Hz
= 2.2kΩ ± 1%
= 2.2kΩ ± 1%
= 2.2kΩ ± 1%
= 0, R
= 0
Unit
mW
mA
mA
mA
°C
°C
V
V
S
= 2.2kΩ ± 1%
0.04
min
300
0.45
0.75 max.
+0.20
–0.10
1
(2.5) (2.5)
4.0
−9.5
−10
−11
500
typ
2
±0.2
3
2.0
max
0.8
4
±0.2
NS-B1 Package
0.7
0.45
±0.1
1: Drain
2: Gate
3: Source
unit: mm
+0.20
–0.10
Unit
mA
µV
µS
dB
dB
dB
241
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