2SK614

Manufacturer Part Number2SK614
DescriptionFor switching
ManufacturerPanasonic Semiconductor
2SK614 datasheet
 


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Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance R
DS(on)
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings
Parameter
Symbol
Drain to Source voltage
V
Gate to Source voltage
V
Drain current
I
D
Max drain current
I
DP
Allowable power dissipation
P
D
Channel temperature
T
ch
Storage temperature
T
stg
I Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Drain to Source breakdown voltage
V
Gate threshold voltage
V
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
Input capacitance (Common Source)
C
iss
Output capacitance (Common Source)
C
oss
Reverse transfer capacitance (Common Source)
C
rss
Turn-on time
t
on
Turn-off time
t
off
* 1
Pulse measurement
* 2
t
, t
measurement circuit
on
off
V
out
68Ω
V
= 10V
in
V
= 30V
t = 1µ
S
DD
50Ω
f = 1MH
Z
(Ta = 25°C)
Ratings
Unit
80
V
DS
20
V
GSO
±0.5
A
±1
A
750
mW
150
°C
−55 to +150
°C
Conditions
V
= 60V, V
= 0
DS
GS
V
= 20V, V
= 0
GS
DS
I
= 100µA, V
= 0
DSS
DS
GS
I
= 1mA, V
= V
th
D
DS
GS
* 1
I
= 0.5A, V
= 10V
D
GS
|
I
= 0.2A, V
= 15V, f = 1kHz
fs
D
DS
V
= 10V, V
= 0, f = 1MHz
DS
GS
* 2
* 2
10%
V
V
in
in
10%
90%
V
V
out
out
t
t
on
off
Note) The part number in the parenthesis shows conventional part number.
5.0
±0.2
0.7
±0.1
+0.15
0.45
0.45
–0.1
+0.6
+0.6
2.5
2.5
–0.2
–0.2
1
2 3
TO-92-A1 Package
min
typ
max
10
0.1
80
1.5
3.5
2
4
300
45
30
8
15
20
90%
unit: mm
4.0
±0.2
+0.15
–0.1
1: Source
2: Drain
3: Gate
JEDEC: TO-92
EIAJ: SC-43
Unit
µA
µA
V
V
mS
pF
pF
pF
ns
ns
277

2SK614 Summary of contents

  • Page 1

    ... Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching I Features G Low ON-resistance R DS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings Parameter Symbol Drain to Source voltage V Gate to Source voltage V Drain current I D Max drain current ...

  • Page 2

    Silicon MOS FETs (Small Signal)  1200 1000 800 600 400 200 100 120 140 160 Ambient temperature Ta ( ˚  600 V ...

  • Page 3

    ... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...