2SK614 Panasonic Semiconductor, 2SK614 Datasheet
2SK614
Manufacturer Part Number
2SK614
Description
For switching
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK614.pdf
(3 pages)
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Part Number:
2SK614
Manufacturer:
PANASONIC
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9 887
Company:
Part Number:
2SK614
Manufacturer:
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Quantity:
9 887
Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance R
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings
I Electrical Characteristics
* 1
* 2
t = 1µ
f = 1MH
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
V
Pulse measurement
t
on
in
, t
S
= 10V
off
Z
measurement circuit
50Ω
Parameter
Parameter
V
68Ω
DS(on)
DD
= 30V
V
out
V
V
I
I
P
T
T
I
I
V
V
R
| Y
C
C
C
t
t
Symbol
Symbol
on
off
D
DP
DSS
GSS
(Ta = 25°C)
D
ch
stg
DS(on)
iss
oss
rss
DS
GSO
DSS
th
* 2
fs
* 2
|
V
(Ta = 25°C)
V
out
in
* 1
V
V
I
I
I
I
V
−55 to +150
DS
D
D
D
DS
GS
DS
Ratings
= 1mA, V
= 0.5A, V
= 0.2A, V
t
on
= 100µA, V
10%
= 60V, V
= 20V, V
= 10V, V
±0.5
750
150
90%
±1
80
20
Note) The part number in the parenthesis shows conventional part number.
V
V
out
Conditions
in
DS
GS
DS
GS
DS
GS
= V
= 10V
= 15V, f = 1kHz
GS
= 0
= 0
= 0, f = 1MHz
= 0
Unit
mW
GS
°C
°C
V
V
A
A
t
off
10%
90%
min
1.5
0.45
80
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
1
5.0
±0.2
300
typ
2 3
45
30
15
20
2
8
2.5
+0.6
–0.2
max
0.1
3.5
TO-92-A1 Package
10
4
0.45
JEDEC: TO-92
+0.15
–0.1
EIAJ: SC-43
4.0
1: Source
2: Drain
3: Gate
±0.2
unit: mm
Unit
µA
µA
mS
pF
pF
pF
ns
ns
V
V
Ω
277
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2SK614 Summary of contents
Page 1
... Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching I Features G Low ON-resistance R DS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings Parameter Symbol Drain to Source voltage V Gate to Source voltage V Drain current I D Max drain current ...
Page 2
Silicon MOS FETs (Small Signal) 1200 1000 800 600 400 200 100 120 140 160 Ambient temperature Ta ( ˚ 600 V ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...