2SK615

Manufacturer Part Number2SK615
DescriptionSILICON N-CHANNEL MOS FET
ManufacturerPanasonic Semiconductor
2SK615 datasheet
 


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Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I Absolute Maximum Ratings
Parameter
Symbol
Drain to Source voltage
V
Gate to Source voltage
V
Drain current
I
D
Max drain current
I
DP
Allowable power dissipation
P
D
Channel temperature
T
ch
Storage temperature
T
stg
*
PC board: Copper foil of the drain portion should have a area of 1cm
more and the board thickness should be 1.7mm.
I Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Drain to Source breakdown voltage
V
Gate threshold voltage
V
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
Input capacitance (Common Source)
C
iss
Output capacitance (Common Source)
C
oss
Reverse transfer capacitance (Common Source)
C
rss
Turn-on time
t
on
Turn-off time
t
off
* 1
Pulse measurement
* 2
t
, t
measurement circuit
on
off
V
out
68Ω
V
= 10V
in
V
= 30V
t = 1µ
S
DD
50Ω
f = 1MH
Z
(Ta = 25°C)
Ratings
Unit
80
V
DS
20
V
GSO
±0.5
A
±1
A
*
1
W
150
°C
−55 to +150
°C
2
or
Conditions
V
= 60V, V
= 0
DS
GS
V
= 20V, V
= 0
GS
DS
I
= 100µA, V
= 0
DSS
DS
GS
I
= 1mA, V
= V
th
D
DS
GS
* 1
I
= 0.5A, V
= 10V
D
GS
|
I
= 0.2A, V
= 15V, f = 1kHz
fs
D
DS
V
= 10V, V
= 0, f = 1MHz
DS
GS
* 1, 2
* 1, 2
10%
V
V
in
in
10%
90%
V
V
out
out
t
t
on
off
Note) The part number in the parenthesis shows conventional part number.
2.5
6.9
±0.1
(1.5)
(1.5)
R 0.9
R 0.7
(0.85)
0.55
±0.1
1
2
3
(2.5)
(2.5)
min
typ
max
10
0.1
80
1.5
3.5
2
4
300
45
30
8
15
20
90%
Unit: mm
±0.1
(1.0)
0.45
±0.05
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
Unit
µA
µA
V
V
mS
pF
pF
pF
ns
ns
1

2SK615 Summary of contents

  • Page 1

    ... Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching I Features G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ...

  • Page 2

    Silicon MOS FETs (Small Signal)  1.6 Copper foil of the drain portion 2 should have a area of 1cm 1.4 or more and the board thickness should be 1.7mm. 1.2 1.0 0.8 0.6 0.4 0.2 0 ...

  • Page 3

    Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

  • Page 4

    ... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...