2SK615 Panasonic Semiconductor, 2SK615 Datasheet
2SK615
Manufacturer Part Number
2SK615
Description
SILICON N-CHANNEL MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK615.pdf
(4 pages)
Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
G M type package, allowing easy automatic and manual insertion as
I Absolute Maximum Ratings
*
I Electrical Characteristics
* 1
* 2
t = 1µ
f = 1MH
PC board: Copper foil of the drain portion should have a area of 1cm
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
V
Pulse measurement
t
well as stand-alone fixing to the printed circuit board.
on
in
, t
S
= 10V
off
Z
measurement circuit
50Ω
Parameter
Parameter
more and the board thickness should be 1.7mm.
V
68Ω
DD
= 30V
V
out
V
V
I
I
P
T
T
I
I
V
V
R
| Y
C
C
C
t
t
Symbol
Symbol
on
off
D
DP
DSS
GSS
(Ta = 25°C)
D
ch
stg
DS(on)
iss
oss
rss
DS
GSO
DSS
th
* 1, 2
*
fs
* 1, 2
|
V
(Ta = 25°C)
V
out
in
* 1
V
V
I
I
I
I
V
−55 to +150
DS
D
D
D
DS
GS
DS
Ratings
= 1mA, V
= 0.5A, V
= 0.2A, V
t
on
= 100µA, V
10%
= 60V, V
= 20V, V
= 10V, V
±0.5
150
90%
±1
80
20
1
Note) The part number in the parenthesis shows conventional part number.
V
V
out
Conditions
in
DS
GS
DS
GS
DS
GS
= V
= 10V
= 15V, f = 1kHz
GS
= 0
= 0
= 0, f = 1MHz
= 0
Unit
GS
°C
°C
W
V
V
A
A
t
off
10%
2
or
90%
R 0.7
min
1.5
80
(1.5)
1
(2.5)
(0.85)
0.55
6.9
(1.5)
±0.1
±0.1
2
R 0.9
(2.5)
300
typ
45
30
15
20
2
8
3
max
0.1
3.5
10
4
2.5
M-A1 Package
±0.1
0.45
EIAJ: SC-71
(1.0)
1: Source
2: Drain
3: Gate
Unit: mm
±0.05
Unit
µA
µA
mS
pF
pF
pF
ns
ns
V
V
Ω
1
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2SK615 Summary of contents
Page 1
... Silicon MOS FETs (Small Signal) 2SK0615 (2SK615) Silicon N-Channel MOS FET For switching I Features G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ...
Page 2
Silicon MOS FETs (Small Signal) 1.6 Copper foil of the drain portion 2 should have a area of 1cm 1.4 or more and the board thickness should be 1.7mm. 1.2 1.0 0.8 0.6 0.4 0.2 0 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...
Page 4
... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...