2SK615 Panasonic Semiconductor, 2SK615 Datasheet - Page 2

• Manufacturer Part Number: 2SK615
• Description: SILICON N-CHANNEL MOS FET
• Manufacturer: Panasonic Semiconductor

Silicon MOS FETs (Small Signal)
2
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
6
5
4
3
2
1
0
0
–50
0
0
Gate to source voltage V
Ambient temperature Ta ( ˚C )
Ambient temperature Ta ( ˚C )
20
1
–25
40
| Y
R
Copper foil of the drain portion
should have a area of 1cm
or more and the board
thickness should be 1.7mm.
DS(on)
2
P
60
fs
D
0
|  V
 Ta
80
V
3
GS
 Ta
=5V
25
100
GS
4
10V
120
I
D
=500mA
50
V
f=1kHz
Ta=25˚C
GS
DS
5
140
=15V
2
( V )
160
75
6
120
100
1.2
1.0
0.8
0.6
0.4
0.2
80
60
40
20
0
0
0
Drain to source voltage V
1
Drain to source voltage V
C
3
iss
2
, C
I
10
oss
D
4
 V
, C
30
rss
DS
6
 V
C
C
C
100
iss
oss
rss
V
Ta=25˚C
GS
DS
V
f=1MHz
Ta=25˚C
8
300
DS
DS
GS
=5.5V
4.5V
3.5V
=0
5V
4V
3V
( V )
( V )
1000
10
1.2
1.0
0.8
0.6
0.4
0.2
6
5
4
3
2
1
0
0
0
0
Gate to source voltage V
Gate to source voltage V
4
2
R
DS(on)
I
D
8
4
 V
 V
12
2SK0615
GS
6
25˚C
–25˚C
Ta=75˚C
GS
I
D
V
Ta=25˚C
=500mA
16
DS
GS
8
GS
=10V
( V )
( V )
20
10