2SK655

Manufacturer Part Number2SK655
DescriptionFor Switching
ManufacturerPanasonic Semiconductor
2SK655 datasheet
 


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Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Allowing to supply with the radial taping
I Absolute Maximum Ratings
Parameter
Symbol
Drain to Source voltage
V
Gate to Source voltage
V
Drain current
I
D
Max drain current
I
DP
Allowable power dissipation
P
D
Channel temperature
T
ch
Storage temperature
T
stg
I Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Drain to Source breakdown voltage
V
Gate threshold voltage
V
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
Input capacitance (Common Source)
C
iss
Output capacitance (Common Source)
C
oss
Reverse transfer capacitance (Common Source)
C
rss
Turn-on time
t
on
Turn-off time
t
off
*
t
, t
measurement circuit
on
off
V
out
200Ω
V
= 5V
GS
V
= 5V
DD
50Ω
(Ta = 25°C)
Ratings
Unit
50
V
DS
8
V
GSO
100
mA
200
mA
200
mW
150
°C
−55 to +150
°C
Conditions
V
= 10V, V
= 0
DS
GS
V
= 8V, V
= 0
GS
DS
I
= 100µA, V
= 0
DSS
D
GS
I
= 100µA, V
= V
th
D
DS
GS
I
= 20mA, V
= 5V
D
GS
|
I
= 20mA, V
= 5V, f = 1kHz
fs
D
DS
V
= 5V, V
= 0, f = 1MHz
DS
GS
*
V
= 5V, V
= 0 to 5V, R
DD
GS
L
*
V
= 5V, V
= 5 to 0V, R
DD
GS
L
90%
10%
V
in
V
out
10%
90%
t
t
on
off
Note) The part number in the parenthesis shows conventional part number.
4.0
2.0
±0.2
±0.2
0.75 max.
+0.20
0.45
–0.10
(2.5) (2.5)
1
2
3
Internal Connection
G
min
typ
max
10
50
50
1.5
3.5
50
20
35
10
15
4
5
0.5
1
= 200Ω
10
= 200Ω
20
unit: mm
+0.20
0.45
–0.10
0.7
±0.1
1: Source
2: Drain
3: Gate
NS-B1 Package
D
S
Unit
µA
µA
V
V
mS
pF
pF
pF
ns
ns
283

2SK655 Summary of contents

  • Page 1

    ... Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET For switching I Features G High-speed switching G Allowing to supply with the radial taping I Absolute Maximum Ratings Parameter Symbol Drain to Source voltage V Gate to Source voltage V Drain current I D Max drain current I DP Allowable power dissipation ...

  • Page 2

    Silicon MOS FETs (Small Signal)  240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚C )  iss oss ...

  • Page 3

    ... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...