2SK657 Panasonic Semiconductor, 2SK657 Datasheet
2SK657
Manufacturer Part Number
2SK657
Description
For Switching
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK657.pdf
(3 pages)
Silicon MOS FETs (Small Signal)
2SK0657 (2SK657)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G M type package, allowing easy automatic and manual insertion as
I Absolute Maximum Ratings
I Electrical Characteristics
*
V
GS
t
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
on
well as stand-alone fixing to the printed circuit board.
= 5V
, t
50Ω
off
measurement circuit
Parameter
Parameter
V
out
200Ω
V
DD
= 5V
V
V
I
I
P
T
T
I
I
V
V
R
| Y
C
C
C
t
t
Symbol
Symbol
on
off
D
DP
DSS
GSS
(Ta = 25°C)
D
ch
stg
DS(on)
iss
oss
rss
DSS
GSO
DSS
th
*
fs
*
|
(Ta = 25°C)
V
V
out
in
V
V
I
I
I
I
V
V
V
−55 to +150
D
D
D
D
DS
GS
DS
DD
DD
Ratings
= 100µA, V
= 100µA, V
= 20mA, V
= 20mA, V
±100
±200
= 10V, V
= 8V, V
= 5V, V
= 5V, V
= 5V, V
400
150
50
8
Note) The part number in the parenthesis shows conventional part number.
t
on
10%
Conditions
GS
GS
DS
GS
GS
GS
DS
GS
DS
= 0 to 5V, R
= 5 to 0V, R
= 0
= 0, f = 1MHz
t
off
= 0
= 5V
= 5V, f = 1kHz
= 0
= V
90%
Unit
mW
mA
mA
°C
°C
V
V
10%
90%
GS
L
L
= 200Ω
= 200Ω
Internal Connection
R 0.7
min
1.5
50
20
G
(1.5)
1
(2.5)
(0.85)
0.55
6.9
(1.5)
±0.1
±0.1
R 0.9
2
typ
(2.5)
10
20
3
max
3.5
1.2
10
50
50
15
6
2.5
S
M-A1 Package
±0.1
EIAJ: SC-71
0.45
(1.0)
1: Source
2: Drain
3: Gate
Unit: mm
±0.05
D
Unit
µA
µA
mS
pF
pF
pF
ns
ns
V
V
Ω
1
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2SK657 Summary of contents
Page 1
... Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET For switching I Features G High-speed switching G M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. I Absolute Maximum Ratings Parameter Symbol Drain to Source breakdown voltage ...
Page 2
Silicon MOS FETs (Small Signal) 0.7 0.6 0.5 0.4 0.3 0.2 0 100 120 140 160 Ambient temperature Ta ( ˚C ) iss ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...