2SK662

Manufacturer Part Number2SK662
DescriptionSilicon N-Channel Junction FET
ManufacturerPanasonic Semiconductor
2SK662 datasheet
 
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Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
I Features
G High mutual conductance g
m
G Low noise type
G S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I Absolute Maximum Ratings
Parameter
Symbol
Drain to Source voltage
V
Gate to Drain voltage
V
Drain current
I
D
Gate current
I
G
Allowable power dissipation
P
D
Junction temperature
T
j
Storage temperature
T
stg
❘I Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Gate to Source cut-off voltage
V
Mutual conductance
g
m
Input capacitance (Common Source)
C
iss
Reverse transfer capacitance (Common Source)
C
rss
Noise figure
NV
*
I
rank classification
DSS
Runk
P
Q
I
(mA)
0.5 to 3
2 to 6
DSS
Marking Symbol
1OP
1OQ
(Ta = 25°C)
Ratings
Unit
30
V
DSX
−30
V
GDO
20
mA
10
mA
150
mW
125
°C
−55 to +125
°C
Conditions
*
V
= 10V, V
= 0
DS
GS
= −30V, V
V
= 0
GS
DS
V
= 10V, I
= 10µA
GSC
DS
D
V
= 10V, I
= 0.5mA, f = 1kHz
DS
D
V
= 10V, V
= 0, f = 1kHz
DS
GS
V
= 10V, V
= 0, f = 1MHz
DS
GS
V
= 30V, I
= 1mA, G
= 80dB
DS
D
V
R
= 100kΩ, Function = FLAT
g
R
4 to 12
1OR
Note) The part number in the parenthesis shows conventional part number.
+0.10
+0.1
0.15
0.3
–0.05
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10°
1: Source
2: Drain
EIAJ: SC-70
3: Gate
SMini3-G1 Package
Marking Symbol (Example): 1O
min
typ
max
0.5
12
−100
− 0.1
−1.5
4
4
14
3.5
60
unit: mm
Unit
mA
nA
V
mS
p F
p F
m V
251

2SK662 Summary of contents

  • Page 1

    ... Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification I Features G High mutual conductance Low noise type G S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. I Absolute Maximum Ratings Parameter ...

  • Page 2

    Silicon Junction FETs (Small Signal)  240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚C )  =10V DS ...

  • Page 3

    ... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...