2SK663 Panasonic Semiconductor, 2SK663 Datasheet
2SK663
Manufacturer Part Number
2SK663
Description
For Low-Frequency Amplification
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK663.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK663-Q(TX)
Manufacturer:
PANASON
Quantity:
20 000
Silicon Junction FETs (Small Signal)
2SK0663 (2SK663)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noise-figure (NF)
G High gate to drain voltage V
G S-mini type package, allowing downsizing of the sets and auto-
I Absolute Maximum Ratings
I Electrical Characteristics
*
Marking Symbol
I
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
DSS
matic insertion through the tape/magazine packing.
I
DSS
Runk
rank classification
(mA)
Parameter
Parameter
1 to 3
2BP
P
GDO
2 to 6.5
2BQ
V
V
V
I
I
P
T
T
I
I
V
V
g
C
C
NF
Symbol
Symbol
Q
D
G
DSS
GSS
(Ta = 25°C)
m
D
j
stg
iss
rss
DSX
GDO
GSO
GDS
GSC
*
(Ta = 25°C)
V
V
I
V
V
V
V
f = 100Hz
−55 to +125
G
5 to 12
DS
GS
DS
DS
DS
DS
2BR
Ratings
= 100µA, V
R
= 10V, V
= −30V, V
= 10V, I
= 10V, I
= 10V, V
= 10V, V
−55
−55
150
125
55
30
10
Note) The part number in the parenthesis shows conventional part number.
Conditions
D
D
GS
GS
GS
DS
= 10µA
= 5mA, f = 1kHz
DS
= 0
= 0, f = 1MHz
= 0, R
= 0
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
g
= 100kΩ
Marking Symbol (Example): 2B
1: Source
2: Drain
3: Gate
10°
0.3
min
2.5
55
(0.65) (0.65)
1
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
2
typ
7.5
6.5
1.9
2.5
80
max
SMini3-G1 Package
−10
12
−5
0.15
EIAJ: SC-70
+0.10
–0.05
unit: mm
Unit
mA
nA
mS
dB
pF
pF
V
V
253
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2SK663 Summary of contents
Page 1
... Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching I Features G Low noise-figure (NF) G High gate to drain voltage V GDO G S-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. I Absolute Maximum Ratings ...
Page 2
Silicon Junction FETs (Small Signal) 240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚C ) =10V DS ...
Page 3
... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...