2SK1062 Toshiba Semiconductor, 2SK1062 Datasheet

2SK1062

Manufacturer Part Number

2SK1062

Description

N CHANNEL MOS TYPE (HIGH SPEED SWTICHING/ ANALOG SWITCHING/ INTERFACE APPLICATIONS)

Manufacturer

Toshiba Semiconductor

Datasheets

1.2SK1062.pdf (5 pages)

2.2SK1062.pdf (3 pages)

3.2SK1062.pdf (3 pages)

4.2SK1062.pdf (5 pages)

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Quantity

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Part Number:

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High Speed Switching Applications

Analog Switching Applications

Interface Applications

•

Absolute Maximum Ratings

Marking

Excellent switching time: t

High forward transfer admittance: |Y

Low on resistance: R

Enhancement-mode

Complementary to 2SJ168

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation (Ta = 25°C)

Channel temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

DS (ON)

Pulse

= 0.6 Ω (typ.) @ I

= 14 ns (typ.)

(Ta = 25°C)

Symbol

GSS

| = 100 ms (min)

stg

= 50 mA

2SK1062

= 50 mA

−55~150

Rating

±20

200

800

200

150

Unit

°C

Weight: 0.012 g (typ.)

JEDEC

JEITA

TOSHIBA

2-3F1F

SC-59

2007-11-01

―

2SK1062

Unit: mm

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