2SK1103 Panasonic Semiconductor, 2SK1103 Datasheet
2SK1103
Manufacturer Part Number
2SK1103
Description
Silicon N-Channel Junction FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK1103.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1103-P(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Silicon Junction FETs (Small Signal)
2SK1103
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ163
*
Marking Symbol
I
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
DSS
Low ON-resistance
Low-noise characteristics
I
Features
Absolute Maximum Ratings
Electrical Characteristics
DSS
Runk
rank classification
(mA)
Parameter
Parameter
0.2 to 1
4LO
O
0.6 to 1.5
4LP
Symbol
V
I
I
P
T
T
Symbol
I
I
V
V
| Y
R
C
C
P
D
G
DSS
GSS
D
ch
stg
DS(on)
iss
rss
GDS
GDS
GSC
fs
(Ta = 25°C)
*
|
(Ta = 25°C)
V
V
I
V
V
V
V
G
DS
GS
DS
DS
DS
DS
1 to 3
55 to +150
4LQ
Ratings
= 10 A, V
Q
= 10V, V
= 30V, V
= 10V, I
= 10V, I
= 10mV, V
= 10V, V
150
150
20
10
65
Conditions
D
D
GS
GS
DS
= 1mA, f = 1kHz
= 10 A
DS
2.5 to 6
GS
= 0
= 0, f = 1MHz
4LR
= 0
= 0
= 0
R
Unit
mW
mA
mA
°C
°C
V
Marking Symbol (Example): 4L
1: Source
2: Drain
3: Gate
min
0.2
1.8
65
0.1 to 0.3
0.65±0.15
0.4±0.2
1
2
300
typ
2.5
1.5
1.5
7
1.5
2.8
Mini Type Package (3-pin)
+0.25
–0.05
+0.2
–0.3
max
3.5
6
10
JEDEC: TO-236
3
EIAJ: SC-59
0.65±0.15
unit: mm
Unit
mA
mS
nA
pF
pF
V
V
1
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2SK1103 Summary of contents
Page 1
... Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 Features Low ON-resistance Low-noise characteristics Absolute Maximum Ratings Parameter Symbol Gate to Drain voltage V Drain current I D Gate current I G Allowable power dissipation P D Channel temperature T ch Storage temperature ...
Page 2
... Drain to source voltage 2.5 V =10V DS Ta=25˚C 2.0 I =10mA DSS 1.5 1.0 0 Drain current I D 2SK1103 2.5 2.0 Ta=–25˚C 1.5 25˚C 1.0 75˚C 0.5 0 –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0 Gate to source voltage iss oss rss DS ...