2SK1151

Manufacturer Part Number2SK1151
DescriptionSilicon N-Channel MOS FET
ManufacturerHitachi Semiconductor
2SK1151 datasheet
 


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2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
2
3
1
2 3
D
G
S
1. Gate
2. Drain
3. Source
4. Drain

2SK1151 Summary of contents

  • Page 1

    ... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK Gate 2. Drain 3. Source 4. Drain ...

  • Page 2

    ... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...

  • Page 3

    ... Gate to source breakdown voltage Gate to source leak current Zero gate voltage 2SK1151 I drain current 2SK1152 Gate to source cutoff voltage Static Drain to source 2SK1151 R on stateresistance 2SK1152 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

  • Page 4

    ... Power vs. Temperature Derating 100 Case Temperature T Typical Output Characteristics 2 Pulse Test 1 1.2 0.8 0 Drain to Source Voltage 1.0 0.3 0.1 0.03 0.01 150 (° 1.6 4.5 V 1.2 0 0 (V) DS Maximum Safe Operation Area 3 2SK1151 Ta = 25°C 2SK1152 1 10 ...

  • Page 5

    ... Gate to Source Voltage V GS Static Drain to Source on State Resistance vs. Temperature Pulse Test 6 0 – Case Temperature T C 2SK1151(L)(S), 2SK1152(L)(S) 100 0.05 (V) Forward Transfer Admittance Pulse Test 2 1 0.5 0.2 0.1 120 160 0.05 0.1 (° ...

  • Page 6

    ... Body to Drain Diode Reverse Recovery Time 1,000 di/dt = 100A 25°C 500 Pulse Test 200 100 0.05 0.1 0.2 0.5 Reverse Drain Current I Dynamic Input Characteristics 500 100 V 250 V 400 V 400 V DS 300 200 V = 400 V 100 DD 250 V 100 Gate Charge Qg (nc) ...

  • Page 7

    ... Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.1 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor D.U.T 50 Vin = 10 V 2SK1151(L)(S), 2SK1152(L)(S) Reverse Drain Current vs. Source to Drain Voltage Pulse Test 5 V, =0, –10V GS 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor ...

  • Page 8

    Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...

  • Page 9

    ... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...