2SK1151 Hitachi Semiconductor, 2SK1151 Datasheet - Page 3

• Manufacturer Part Number: 2SK1151
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

Electrical Characteristics (Ta = 25°C)
Item
Drain to source
breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
Gate to source cutoff voltage
Static Drain to source 2SK1151 R
on stateresistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note:
1. Pulse test
2SK1151 V
2SK1152
2SK1151 I
2SK1152
2SK1152
V
I
V
|yfs|
Crss
V
t
Symbol Min
Ciss
Coss
t
t
t
t
GSS
rr
DSS
d(on)
r
d(off)
f
(BR)GSS
GS(off)
DF
(BR)DSS
DS(on)
—
2.0
—
—
0.6
—
450
500
—
—
—
—
—
—
—
—
—
30
—
—
—
1.1
5
1.0
220
Typ
—
—
3.5
4.0
160
45
5
10
20
10
—
3.0
—
—
—
—
Max
—
100
5.5
6.0
—
—
—
—
—
—
2SK1151(L)(S), 2SK1152(L)(S)
10
V
V
S
pF
V
ns
Unit
V
pF
pF
ns
ns
ns
ns
A
A
I
V
I
I
I
I
di
Test conditions
I
V
V
I
V
f = 1 MHz
I
R
G
D
D
F
F
D
D
D
GS
DS
DS
DS
F
L
= 1.5 A, V
= 1.5 A, V
= 100 A, V
= 1 mA, V
= 1 A, V
/dt = 100 A/ s
= 10 mA, V
= 1 A, V
= 1 A, V
= 30
= 25 V, V
= 360 V, V
= 400 V, V
= 10 V, V
DS
GS
GS
GS
GS
DS
= 20 V *
= 10 V *
= 10 V,
GS
GS
DS
= 10 V
= 0
= 0,
GS
GS
DS
= 0,
= 0
= 0
= 0
= 0
= 0
1
1
3