2SK1151 Hitachi Semiconductor, 2SK1151 Datasheet - Page 4

• Manufacturer Part Number: 2SK1151
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1151(L)(S), 2SK1152(L)(S)
4
30
20
10
0
2.0
1.6
1.2
0.8
0.4
0
Pulse Test
Power vs. Temperature Derating
Case Temperature T
Drain to Source Voltage V
Typical Output Characteristics
4
50
15 V
8
10 V
V
100
6 V
GS
12
C
5 V
= 3.5 V
4.5 V
(°C)
4 V
DS
16
(V)
150
20
0.03
0.01
1.0
0.3
0.1
10
2.0
1.6
1.2
0.8
0.4
3
0
1
Ta = 25°C
Drain to Source Voltage V
Gate to Source Voltage V
Maximum Safe Operation Area
Typical Transfer Characteristics
75°C
2
10
4
2SK1152
2SK1151
T
C
–25°C
6
= 25°C
100
V
Pulse Test
DS
DS
GS
= 20 V
8
(V)
(V)
1,000
10