2SK1151 Hitachi Semiconductor, 2SK1151 Datasheet - Page 7

• Manufacturer Part Number: 2SK1151
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

0.03
0.01
Vin = 10 V
1.0
0.3
0.1
3
10
Vin Monitor
Switching Time Test Circuit
0.5
D = 1
50
100
Normalized Transient Thermal Impedance vs. Pulse Width
D.U.T
2.0
1.6
1.2
0.8
0.4
0
V
1 m
Source to Drain Voltage V
R
Pulse Test
DD
5 V,10 V
L
Vout Monitor
0.4
= 30 V
.
Reverse Drain Current vs.
.
Source to Drain Voltage
Pulse Width PW (s)
0.8
V
GS
10 m
=0, –10V
1.2
t d (on)
2SK1151(L)(S), 2SK1152(L)(S)
Vout
Vin
SD
1.6
(V)
100 m
10 %
P
10 %
2.0
ch–c(t) =
ch–c = 6.25°C/W, T
DM
90 %
t r
Wavewforms
T
PW
S
t d (off)
(t) · ch–c
1
T
90 %
C
= 25°C
D =
C
90 %
= 25°C
PW
T
10 %
t f
10
7