2SK1157 Hitachi Semiconductor, 2SK1157 Datasheet
2SK1157
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2SK1157 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB Gate 2. Drain (Flange) 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Symbol ...
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... Gate to source breakdown voltage Gate to source leak current Zero gate voltage 2SK1157 I drain current 2SK1158 Gate to source cutoff voltage Static Drain to source 2SK1157 R on state resistance 2SK1158 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...
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... Power vs. Temperature Derating Case Temperature T Typical Output Characteristics Drain to Source Voltage 1.0 0.5 0.2 0.1 0.05 100 150 (° Pulse Test (V) DS Maximum Safe Operation Area Ta = 25°C ...
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... V DS Pulse Test 1.0 0.5 120 160 0.1 (°C) C 2SK1157, 2SK1158 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 1 Drain Current I (A) D Forward Transfer Admittance vs. Drain Current = 20 V –25° 25°C C 75°C ...
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... Body to Drain Diode Reverse Recovery Time 5,000 di/dt = 100 25° 2,000 Pulse Test 1,000 500 200 100 50 0.2 0.5 1.0 2 Reverse Drain Current I Dynamic Input Characteristics 500 400 300 200 100 V = 400 V DD 250 V 100 ...
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... V GS 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin R L Vout . (on) 2SK1157, 2SK1158 2 25°C C ch–c (t) = (t) · ch–c S ch–c = 2.08°C/ 25° Wavewforms ...
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MAX 10.16 0.2 9.5 8.0 1.5 MAX 0.76 2.54 0.5 2.54 +0.1 3.6 -0.08 0.1 0.5 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 4.44 0.2 1.26 0.15 2.7 MAX 0.1 TO-220AB Conforms Conforms 1.8 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...