2SK1296 Hitachi Semiconductor, 2SK1296 Datasheet
2SK1296
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2SK1296 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance www.DataSheet4U.com • High speed switching • Low drive current • gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Table 1 Absolute Maximum Ratings (Ta = 25° ...
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... Table 2 Electrical Characteristics (Ta = 25°C) Item ——————————————————————————————————————————— ...
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... Drain to Source Voltage V 50 100 150 (° 3 Pulse Test 2 (V) DS 2SK1296 Maximum Safe Operation Area 500 200 100 Operation in this area is limited (on 25°C 1.0 0.5 0.1 0.3 1 100 Drain to Source Voltage V ...
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... Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 www.DataSheet4U.com 1.2 0.8 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 0.05 0.04 0.03 0.02 0.01 0 –40 Case Temperature T Pulse Test ( A, A, Pulse Test ...
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... 100 120 160 200 2SK1296 Typical Capacitance vs. Drain to Source Voltage 10000 MHz Ciss 1000 Coss Crss 100 Drain to Source Voltage V (V) DS Switching Characteristics ...
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... Reverse Drain Current vs. Source to Drain Voltage 50 Pulse Test 40 www.DataSheet4U.com 0.4 Source to Drain Voltage 1.0 0.5 0.3 0.1 0.03 0. – 0.8 1.2 1.6 2.0 (V) SD Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW ( 25°C C ch–c ( (t) · ch–c ch– ...
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... Switching Time Test Circuit Vin Monitor www.DataSheet4U.com 50 Vin = 10 V Vout Monitor D.U.T Vin R L Vout . (on) DD 2SK1296 Wavewforms (off ...