2SK1296

Manufacturer Part Number2SK1296
DescriptionSilicon N-Channel MOS FET
ManufacturerHitachi Semiconductor
2SK1296 datasheet
 


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2SK1296
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
www.DataSheet4U.com
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
———————————————————————————————————————————
Gate to source voltage
———————————————————————————————————————————
Drain current
———————————————————————————————————————————
Drain peak current
———————————————————————————————————————————
Body to drain diode reverse drain current
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel temperature
———————————————————————————————————————————
Storage temperature
———————————————————————————————————————————
PW 10 µs, duty cycle 1 %
*
Value at T
= 25 °C
**
C
TO–220AB
2
1
3
Symbol
Ratings
Unit
V
60
V
DSS
V
±20
V
GSS
I
30
A
D
I
*
120
A
D(pulse)
I
30
A
DR
Pch**
75
W
Tch
150
°C
Tstg
–55 to +150
°C
1
2
3
1. Gate
2. Drain
(Flange)
3. Source

2SK1296 Summary of contents

  • Page 1

    ... Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance www.DataSheet4U.com • High speed switching • Low drive current • gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Table 1 Absolute Maximum Ratings (Ta = 25° ...

  • Page 2

    ... Table 2 Electrical Characteristics (Ta = 25°C) Item ——————————————————————————————————————————— ...

  • Page 3

    ... Drain to Source Voltage V 50 100 150 (° 3 Pulse Test 2 (V) DS 2SK1296 Maximum Safe Operation Area 500 200 100 Operation in this area is limited (on 25°C 1.0 0.5 0.1 0.3 1 100 Drain to Source Voltage V ...

  • Page 4

    ... Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 www.DataSheet4U.com 1.2 0.8 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 0.05 0.04 0.03 0.02 0.01 0 –40 Case Temperature T Pulse Test ( A, A, Pulse Test ...

  • Page 5

    ... 100 120 160 200 2SK1296 Typical Capacitance vs. Drain to Source Voltage 10000 MHz Ciss 1000 Coss Crss 100 Drain to Source Voltage V (V) DS Switching Characteristics ...

  • Page 6

    ... Reverse Drain Current vs. Source to Drain Voltage 50 Pulse Test 40 www.DataSheet4U.com 0.4 Source to Drain Voltage 1.0 0.5 0.3 0.1 0.03 0. – 0.8 1.2 1.6 2.0 (V) SD Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW ( 25°C C ch–c ( (t) · ch–c ch– ...

  • Page 7

    ... Switching Time Test Circuit Vin Monitor www.DataSheet4U.com 50 Vin = 10 V Vout Monitor D.U.T Vin R L Vout . (on) DD 2SK1296 Wavewforms (off ...