2SK1296 Hitachi Semiconductor, 2SK1296 Datasheet - Page 2

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2SK1296

Manufacturer Part Number
2SK1296
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Table 2 Electrical Characteristics (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
voltage
———————————————————————————————————————————
Gate to source breakdown
voltage
———————————————————————————————————————————
Gate to source leak current
———————————————————————————————————————————
Zero gate voltage drain current
———————————————————————————————————————————
Gate to source cutoff voltage
———————————————————————————————————————————
Static drain to source on state
resistance
———————————————————————————————————————————
Forward transfer admittance
———————————————————————————————————————————
Input capacitance
————————————————————————————————
Output capacitance
————————————————————————————————
Reverse transfer capacitance
———————————————————————————————————————————
Turn-on delay time
————————————————————————————————
Rise time
————————————————————————————————
Turn-off delay time
————————————————————————————————
Fall time
———————————————————————————————————————————
Body to drain diode forward
voltage
———————————————————————————————————————————
Body to drain diode reverse
recovery time
———————————————————————————————————————————
* Pulse Test
2SK1296
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
Min
60
±20
1.0
———————————
17
Typ
0.024
0.030
27
2250
1230
300
20
125
390
225
1.3
160
Max
±10
250
2.0
0.028
0.040
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
——————————–
I
I
V
f = 1 MHz
I
R
I
I
di
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
F
= 30 A, V
= 30 A, V
= 10 mA, V
= 1 mA, V
= 15 A, V
= 15 A, V
= 15 A, V
= 15 A, V
= ±100 µA, V
/dt = 50 A/µs
= 2
= ±16 V, V
= 50 V, V
= 10 V, V
GS
GS
GS
GS
DS
GS
DS
GS
GS
GS
= 0
= 0,
DS
= 10 V *
= 10 V *
= 4 V *
= 10 V,
DS
= 10 V
= 0
= 0
= 0,
= 0
= 0

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