2SK1296 Hitachi Semiconductor, 2SK1296 Datasheet - Page 3

• Manufacturer Part Number: 2SK1296
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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150
100
50
40
30
20
10
50
0
0
0
15 V
Drain to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
2
Case Temperature T
4 V
10 V
5 V
50
V
4
GS
= 2.5 V
3.5 V
6
3 V
100
Pulse Test
C
DS
(°C)
8
(V)
150
10
500
200
100
1.0
0.5
50
20
10
50
40
30
20
10
5
2
0
0
0.1
Operation in this area
is limited by R
Drain to Source Voltage V
Gate to Source Voltage V
Maximum Safe Operation Area
Typical Transfer Characteristics
0.3
Ta = 25°C
V
Pulse Test
1
DS
T
C
= 10 V
= 25°C
1.0
75°C
2
DS (on)
3
3
–25°C
10
DS
GS
4
30
(V)
(V)
100
2SK1296
5