2SK1296 Hitachi Semiconductor, 2SK1296 Datasheet - Page 5

• Manufacturer Part Number: 2SK1296
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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100
80
60
40
20
1000
0
500
200
100
50
20
10
0.5
V
DS
Dynamic Input Characteristics
40
di/dt = 50 A/ s, Ta = 25°C
V
Pulse Test
V
Reverse Drain Current I
1.0
Body to Drain Diode Reverse
GS
DD
Gate Charge Qg (nc)
V
DD
25 V
10 V
= 0
= 100 V
25 V
50 V
= 50 V
2
80
Recovery Time
V
GS
120
5
I
D
10
= 30 A
160
DR
20
(A)
200
20
16
12
8
4
0
50
10000
500
200
100
1000
50
20
10
100
5
10
0.5
0
V
PW = 2 s, duty < 1 %
GS
1.0
Drain to Source Voltage V
= 10 V
Switching Characteristics
10
t
d (off)
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
2
t
t
d (on)
f
t
r
20
5
Ciss
Coss
Crss
30
10
D
(A)
V
f = 1 MHz
20
DS
GS
40
(V)
= 0
2SK1296
50
50