2SK1296 Hitachi Semiconductor, 2SK1296 Datasheet - Page 6

• Manufacturer Part Number: 2SK1296
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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2SK1296
50
40
30
20
10
0
0.03
0.01
1.0
0.3
0.1
10
3
Source to Drain Voltage V
Pulse Test
0.4
Reverse Drain Current vs.
D = 1
0.5
Source to Drain Voltage
10 V
0.8
100
5 V
V
1.2
GS
Normalized Transient Thermal Impedance vs. Pulse Width
= 0, –5 V
SD
1.6
(V)
1 m
2.0
Pulse Width PW (s)
10 m
100 m
P
DM
ch–c (t) = s (t) · ch–c
ch–c = 1.67°C/W, T
T
PW
T
1
C
= 25°C
C
D = PW
= 25°C
T
10