2SK1297 Hitachi Semiconductor, 2SK1297 Datasheet
2SK1297
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2SK1297 Summary of contents
Page 1
... Low on-resistance x High speed switching x Low drive current gate drive device x Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive x Outline 2SK1297 Silicon N-Channel MOS FET TO- Gate 2. Drain (Flange Source ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation www.DataSheet4U.com Channel temperature Storage temperature d Notes Value Symbol V DSS V GSS ...
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... V — 1.2 — — 155 — 2SK1297 Test conditions mA 100 mA ...
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... Power vs. Temperature Derating 120 80 40 www.DataSheet4U.com 0 Case Temperature T 0.05 Pulse Test 0.04 0.03 0.02 0.01 0 –40 Body to Drain Diode Reverse 500 200 100 50 20 di/ 25° Pulse Test 5 0.5 1.0 Reverse Drain Current 100 150 (°C) C Static Drain to Source on State Resistance vs. Temperature ...
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... Gate Charge Qg (nc) Reverse Drain Current vs. Source to Drain Voltage 100 Pulse Test 0.4 0.8 1.2 Source to Drain Voltage V 2SK1297 Switching Characteristics 1000 t d (off) t 500 f 200 t 100 (on • • ...
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... 1.0 0.5 0.3 0.1 www.DataSheet4U.com 0.03 0.01 10 Switching Time Test Circuit Vin Monitor Vin = Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW (s) Vout Monitor D.U (on 25°C C ch–c ( (t) • ch–c ch–c = 1.25°C/ 25°C ...
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... APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Notice 2SK1297 7 ...