2SK1298 Hitachi Semiconductor, 2SK1298 Datasheet - Page 6

• Manufacturer Part Number: 2SK1298
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1298
6
500
200
100
100
50
20
10
80
60
40
20
5
0.5
0
V
Reverse Drain Current I
1.0
DS
Body to Drain Diode Reverse
Dynamic Input Characteristics
di/dt = 50 A/ s, Ta = 25 C
V
Pulse Test
50 V
40
GS
Gate Charge Qg (nc)
25 V
= 0
2
V
Recovery Time
DD
V
80
= 10 V
DD
5
50 V
= 10 V
25 V
120
10
V
I
GS
D
DR
= 40 A
160
20
(A)
50
200
20
16
12
8
4
0
10000
1000
1000
500
200
100
100
50
20
10
10
0.5
0
Drain to Source Voltage V
1.0
10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
t
d (on)
Drain Current I
t
t
r
2
d (off)
t
f
V
PW = 2 s, duty < 1 %
GS
20
= 10 V V
Ciss
5
Coss
Crss
30
10
D
DD
(A)
V
f = 1 MHz
= 30 V
•
DS
20
•
GS
40
(V)
= 0
50
50