2SK1299L

Manufacturer Part Number2SK1299L
DescriptionSilicon N-Channel MOS FET
ManufacturerHitachi Semiconductor
2SK1299L datasheet
 


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2SK1299(L), 2SK1299(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
DPAK-1
4
4
1
2
3
1
2 3
D
G
S
1. Gate
2. Drain
3. Source
4. Drain

2SK1299L Summary of contents

  • Page 1

    Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch ...

  • Page 2

    Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes ...

  • Page 3

    Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current I Gate to source cutoff voltage Static Drain to source on state resistance Forward ...

  • Page 4

    Power vs. Temperature Derating Case Temperature T Typical Output Characteristics 4 Drain to Source Voltage ...

  • Page 5

    Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 1.6 1 Gate to Source Voltage V GS Static Drain to Source on State Resistance vs. ...

  • Page 6

    Body to Drain Diode Reverse Recovery Time 500 200 100 50 20 di/ Pulse Test 5 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics 200 ...

  • Page 7

    Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.1 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor D.U.T 50 Vin = 10 V Reverse Drain Current ...

  • Page 8

    Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...

  • Page 9

    ... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...