2SK1299L Hitachi Semiconductor, 2SK1299L Datasheet - Page 4

• Manufacturer Part Number: 2SK1299L
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1299(L), 2SK1299(S)
4
30
20
10
0
10
8
6
4
2
0
Power vs. Temperature Derating
10 V
Drain to Source Voltage V
Case Temperature T
5 V
Typical Output Characteristics
2
50
4.5 V
4
100
V
6
GS
C
3.5 V
4 V
3 V
(°C)
= 2.5 V
Pulse Test
DS
8
(V)
150
10
0.05
0.5
0.2
0.1
50
20
10
5
4
3
2
1
0
0
5
2
1
1
V
Pulse Test
Operation in this area
Ta = 25°C
is limited by R
DS
2
Drain to Source Voltage V
Gate to Source Voltage V
Typical Transfer Characteristics
Maximum Safe Operation Area
= 10 V
1
25°C
75°C
5
10
2
DS (on)
20
50
T
3
C
100
= –25°C
200
GS
DS
4
(V)
(V)
500
1000
5