2SK1299L Hitachi Semiconductor, 2SK1299L Datasheet - Page 6

• Manufacturer Part Number: 2SK1299L
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1299(L), 2SK1299(S)
6
500
200
100
200
160
120
50
20
10
80
40
5
0.1
0
V
Reverse Drain Current I
0.2
DS
Body to Drain Diode Reverse
Dynamic Input Characteristics
V
8
V
DD
Gate Charge Qg (nc)
DD
= 80 V
0.5
Recovery Time
= 25 V
50 V
25 V
16
50 V
80 V
di/dt = 50 A/ s
Pulse Test
1
V
V
GS
GS
24
= 0, Ta = 25°C
2
DR
I
D
32
= 3 A
(A)
5
10
40
20
16
12
8
4
0
1000
500
200
100
100
50
20
10
10
5
1
0.1
0
V
f = 1 MHz
GS
Drain to Source Voltage V
0.2
t
= 0
d (on)
10
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
Drain Current I
0.5
t
t
r
f
V
PW = 2 s, duty < 0.1 %
20
GS
1
t
= 10 V, V
d (off)
30
D
Ciss
2
(A)
Coss
DD
Crss
DS
40
= . .
5
(V)
30 V
10
50