2SK1299L Hitachi Semiconductor, 2SK1299L Datasheet - Page 7

• Manufacturer Part Number: 2SK1299L
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

0.03
0.01
Vin = 10 V
1.0
0.3
0.1
10
3
Vin Monitor
Switching Time Test Circuit
D = 1
0.5
50
100
D.U.T
Normalized Transient Thermal Impedance vs. Pulse Width
10
8
6
4
2
0
V
Pulse Test
Source to Drain Voltage V
R
1 m
V
DD
L
GS
Vout Monitor
0.4
Reverse Drain Current vs.
= 30 V
.
.
Source to Drain Voltage
= 10 V
Pulse Width PW (s)
5 V
0.8
10 m
1.2
V
t d (on)
GS
Vout
Vin
= 0, – 5 V
SD
1.6
(V)
100 m
2SK1299(L), 2SK1299(S)
10 %
2.0
10 %
P
90 %
t r
ch–c (t) = s (t) · ch–c
ch–c = 6.25°C/W, T
DM
Wavewforms
T
t d (off)
T
PW
C
90 %
= 25°C
1
90 %
C
D = PW
= 25°C
10 %
t f
T
10
7