2SK1301 Hitachi Semiconductor, 2SK1301 Datasheet

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2SK1301

Manufacturer Part Number
2SK1301
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Part Number:
2SK1301
Manufacturer:
RENESAS
Quantity:
5 000
Part Number:
2SK1301
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Can be driven from 5 V source
Silicon N-Channel MOS FET
TO-220AB
G
2SK1301
S
D
1
2
3
1. Gate
2. Drain
3. Source
(Flange)

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2SK1301 Summary of contents

Page 1

... Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK1301 TO-220AB Gate 2. Drain (Flange) 3 ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS ...

Page 3

... V — 1.3 — — 250 — rr 2SK1301 Unit Test conditions mA 100 mA, V ...

Page 4

... Power vs. Temperature Derating Case Temperature T Typical Output Characteristics 2 Drain to Source Voltage V 4 100 30 10 0.3 0.1 100 150 (°C) C Pulse Test 3 2 (V) DS Maximum Safe Operation Area 3 1 Operation in this area Ta = 25° ...

Page 5

... Pulse Test 0.5 0.2 120 160 (°C) 2SK1301 Static Drain to Source on State Resistance vs. Drain Current Drain Current I (A) D Forward Transfer Admittance vs. Drain Current = 10 V –25° 25°C C 75° ...

Page 6

... Body to Drain Diode Reverse Recovery Time 500 di/ 25° 200 Pulse Test 100 0.2 0.5 1.0 2 Reverse Drain Current I Dynamic Input Characteristics 100 Gate Charge Qg (nc) ...

Page 7

... GS 0.4 0.8 1.2 1.6 Source to Drain Voltage V ( 100 m Pulse Width PW (s) Vout Monitor Vin R L Vout . (on) 2SK1301 2 25°C C ch–c ( (t) · ch–c ch–c = 2.5°C/ 25° Wavewforms ...

Page 8

MAX 10.16 0.2 9.5 8.0 1.5 MAX 0.76 2.54 0.5 2.54 +0.1 3.6 -0.08 0.1 0.5 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 4.44 0.2 1.26 0.15 2.7 MAX 0.1 TO-220AB Conforms Conforms 1.8 g Unit: mm ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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