2SK1306 Hitachi Semiconductor, 2SK1306 Datasheet

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2SK1306

Manufacturer Part Number
2SK1306
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1306
Manufacturer:
IR
Quantity:
20 000
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Can be driven from 5 V source
Silicon N-Channel MOS FET
TO-220FM
G
2SK1306
S
D
1
2 3
1. Gate
2. Drain
3. Source

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2SK1306 Summary of contents

Page 1

... High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK1306 TO-220FM Gate 2. Drain 3. Source ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS ...

Page 3

... V — 1.3 — — 250 — rr 2SK1306 Unit Test conditions mA 100 mA, V ...

Page 4

... Power vs. Temperature Derating Case Temperature T Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 100 4 100 1.0 0.3 0.1 100 150 (° Pulse Width PW (s) Maximum Safe Operation Area Ta = 25° 100 300 Drain to Source Voltage 25° ...

Page 5

Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.2 0.2 TO-220FM — Conforms 1.8 g ...

Page 6

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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