2SK1307 Hitachi Semiconductor, 2SK1307 Datasheet
2SK1307
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2SK1307 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SK1307 TO-220FM Gate 2. Drain 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS ...
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... V — 1.3 — — 300 — rr 2SK1307 Unit Test conditions mA 100 ...
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... Power vs. Temperature Derating Case Temperature T Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 100 4 100 1.0 0.3 0.1 100 150 (° Pulse Width PW (s) Maximum Safe Operation Area Ta = 25° 100 300 Drain to Source Voltage V (V) ...
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Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.2 0.2 TO-220FM — Conforms 1.8 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...