2SK1334 Hitachi Semiconductor, 2SK1334 Datasheet

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2SK1334

Manufacturer Part Number
2SK1334
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1334BYTL-E
Manufacturer:
RENESAS
Quantity:
8 000
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
Low drive current
No secondary Breakdown
Suitable for switching regulator and DC-DC converter
Silicon N-Channel MOS FET
UPAK
G
2SK1334
S
D
3
2 1
1. Gate
2. Drain
3. Source
4. Drain
4

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2SK1334 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline 2SK1334 UPAK Gate G 2. Drain 3. Source 4. Drain S 4 ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the alumina ceramic board (12.5 ...

Page 3

... Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Notes: 1. Pulse test 2. Marking for 2SK1334 is “BY”. Symbol Min Typ Max V 200 — — (BR)DSS V 20 — ...

Page 4

... Power vs. Temperature Derating 1.2 Test Condition: When using alumina ceramic board(12.5 20 0.7mm) 0.8 0 Ambient Temperature Ta (°C) Typical Output Characteristics 2 1 1 Drain to Source Voltage V 4 0.5 0.2 0.1 0.05 0.02 0.01 0.005 100 150 2.0 Pulse Test 1.6 1.2 0.8 0 (V) DS Maximum Safe Operation Area ...

Page 5

... A 1 0 0.05 ( Pulse Test 0.5 0.5 A 0.2 0.1 0.05 120 160 (°C) 2SK1334 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.1 0.2 0 Drain Current I (A) D Forward Transfer Admittance vs. Drain Current = –25° 25°C C 75°C ...

Page 6

... Reverse Recovery Time vs. Reverse Drain Current 500 di/ 25° 200 100 0.05 0.1 0.2 0.5 Reverse Drain Current I Dynamic Input Characteristics 500 V = 150 V DD 100 V 400 50 V 300 200 150 V 100 DD 100 Gate Charge Qg (nc) ...

Page 7

... Reverse Drain Current vs. Source to Drain Voltage 2.0 Pulse Test 1.6 1 – 0.4 0.8 1.2 1.6 Source to Drain Voltage V SD 2SK1334 2.0 (V) 7 ...

Page 8

Max 1 0.53 Max 0.48 Max 1.5 1.5 3.0 1.5 0.1 0.44 Max 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm (1.5) UPAK — Conforms 0.050 g ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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