2SK1933 Hitachi Semiconductor, 2SK1933 Datasheet

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2SK1933

Manufacturer Part Number
2SK1933
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet
Application
High speed power switching
Features
Outline
Low on-resistance
High speed switching
No secondary breakdown
Suitable for Switching regulator
Silicon N-Channel MOS FET
TO-3P
G
2SK1933
S
D
1
2
3
1. Gate
2. Drain
3. Source
(Flange)

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2SK1933 Summary of contents

Page 1

... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline 2SK1933 TO- Gate 2. Drain (Flange) 3. Source ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS V GSS ...

Page 3

... V — 0.9 — — 1600 — rr 2SK1933 Unit Test conditions mA 100 720 ...

Page 4

... Power vs. Temperature Derating 150 100 Case Temperature Tc (°C) Typical Output Characteristics Drain to Source Voltage 0.3 0.1 0.05 100 150 10 Pulse Test 3 (V) DS Maximum Safe Operation Area ...

Page 5

... Pulse Test 0 0.2 0 0.5 1 (V) GS Forward Transfer Admittance 50 Pulse Test –25° 0.5 0.1 0.2 120 160 2SK1933 = Drain Current I (A) D vs. Drain Current = 25°C 75°C 0 Drain Current I ( ...

Page 6

... Body to Drain Diode Reverse Recovery Time 5000 2000 1000 500 200 di/dt = 100 25°C 100 50 0.1 0.2 0.5 1 Reverse Drain Current I Dynamic Input Characteristics 1000 V = 250 V DD 800 400 V 600 V V 600 DS 400 200 V = 250 V DD 400 V 600 120 ...

Page 7

... 1.0 0.5 0.3 0.2 0.1 0.1 0.03 0.01 10 100 Reverse Drain Current vs. Source to Drain Voltage Pulse Test –5 V 0.2 0.4 0.6 0.8 Source to Drain Voltage V ( 100 m Pulse Width PW (s) 2SK1933 1 25°C C ch–c (t) = (t) · ch–c S ch–c = 0.83°C/ 25° ...

Page 8

... Switching Time Test Circuit Vin Monitor D.U.T 50 Vin Vout Monitor Vin 10 10% Vout (on) Waveforms 90% 10% 90% 90 (off) f ...

Page 9

Max 0.9 3.6 1.0 5.45 0.5 4.8 0.2 1.0 0.2 0.6 5.45 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 1.5 2.8 0.2 TO-3P — Conforms 5.0 g Unit: mm ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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