2SK1933 Hitachi Semiconductor, 2SK1933 Datasheet - Page 4

• Manufacturer Part Number: 2SK1933
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

2SK1933
4
150
100
10
50
8
6
4
2
0
0
10 V
Drain to Source Voltage V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc (°C)
10
6 V
50
20
V
30
GS
100
5 V
4 V
Pulse Test
= 3.5 V
40
DS
(V)
150
50
0.05
0.3
0.1
10
50
30
10
8
6
4
2
0
3
1
1
Gate to Source Voltage V
Drain to Source Voltage V
Pulse Test
V
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
Tc = 25°C
75°C
3
2
= 20 V
10
4
30
–25°C
6
100
GS
DS
300 1000
8
(V)
(V)
10