2SK1933 Hitachi Semiconductor, 2SK1933 Datasheet - Page 6

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2SK1933

Manufacturer Part Number
2SK1933
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Quantity
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2SK1933
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Quantity:
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2SK1933
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2SK1933
6
1000
5000
2000
1000
800
600
400
200
500
200
100
50
0
0.1
V
di/dt = 100 A/ s, V
Ta = 25°C
Reverse Drain Current I
Dynamic Input Characteristics
Body to Drain Diode Reverse
DS
0.2
V
40
DD
Gate Charge Qg (nc)
V
DD
= 250 V
600 V
Recovery Time
400 V
0.5
= 250 V
80
600 V
400 V
1
120
V
GS
GS
2
= 0
I = 8 A
160
D
DR
5
(A)
200
10
20
16
12
8
4
0
10000
1000
500
200
100
100
50
20
10
10
5
0.2
0
V
PW = 5 s, duty
Drain to Source Voltage V
V
f = 1 MHz
GS
GS
vs. Drain to Source Voltage
0.5
Switching Characteristics
10
= 10 V, V
= 0
Drain Current I
Typical Capacitance
1
20
DD
2
< =
= 30 V
:
Coss
Ciss
1%
30
t (on)
t (off)
d
d
D
Crss
t
t
5
f
r
(A)
40
DS
10
(V)
20
50

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