2SK1957 Hitachi Semiconductor, 2SK1957 Datasheet
2SK1957
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2SK1957 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator converter,Motor Control Outline 2SK1957 TO-220FM Gate 2. Drain 3. Source ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol V DSS V GSS ...
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... V — 1.1 — — 150 — rr 2SK1957 Unit Test conditions mA 100 =160 mA ...
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... Power vs. Temperature Derating Case Temperature Tc (°C) Typical Output Characteristics Drain to Source Voltage 0.3 0.1 0.05 100 150 10 5.5 V Pulse Test (V) DS Maximum Safe Operation Area °C ...
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... Pulse Test 0.5 0.2 0.1 0 (V) Forward Transfer Admittance Pulse Test 0.5 0.1 0.2 120 160 2SK1957 Drain Current I (A) D vs. Drain Current = 25°C –25°C 75°C 0 Drain Current I ( ...
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... Body to Drain Diode Reverse Recovery Time 500 200 100 50 di/dt = 100 0.2 0 Reverse Drain Current I Dynamic Input Characteristics 500 150 V 400 DD 100 300 200 150 V 100 DD 100 Gate Charge Qg (nc) 6 1000 100 ...
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... Pulse Test –5 V 0.4 0.8 1.2 1.6 ( 100 m Pulse Width PW (s) Vout Monitor Vin 10 10% Vout . = (on) 2SK1957 2 ch–c (t) = (t) · ch–c S ch–c = 4.17 C/ Waveforms 90% 10% 90% 90 (off) r ...
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Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.2 0.2 TO-220FM — Conforms 1.8 g ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...