2SK1957 Hitachi Semiconductor, 2SK1957 Datasheet - Page 3

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2SK1957

Manufacturer Part Number
2SK1957
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
2SK1957
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HITACHI
Quantity:
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2SK1957
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Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current I
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
Symbol
V
V
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DF
fs
|
Min
200
2.0
3.0
20
Typ
0.33
4.5
700
260
45
20
45
50
35
1.1
150
Max
250
4.0
0.45
10
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test conditions
I
I
V
V
I
I
V
I
V
V
V
f = 1 MHz
I
V
R
I
I
di
D
G
D
D
D
D
F
F
GS
DS
GS
DS
DS
GS
GS
L
F
= 7 A, V
= 7 A, V
= 10 mA, V
= 100 A, V
= 1 mA, V
= 4 A
= 4 A
= 4 A
= 7.5
/ dt = 100 A / s
=160 V, V
= 10 V*
= 10 V
= 16 V, V
= 10 V*
= 0
= 10 V
GS
GS
1
1
DS
= 0
= 0,
GS
GS
DS
= 10 V
DS
2SK1957
= 0
= 0
= 0
= 0
3

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