2SK217 Hitachi Semiconductor, 2SK217 Datasheet
2SK217
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2SK217 Summary of contents
Page 1
... Silicon N-Channel Junction FET Application VHF amplifier Outline MPAK 2SK217 Gate 2. Drain 2 3. Source ...
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... Channel temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Gate to drain breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Reverse transfer capacitance Note: 1. The 2SK217 is grouped by I Grade C D Mark 2 DSS 2 ...
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... Drain to Source Voltage V DS Typical Output Characteristics ( –0 150 Drain to Source Voltage V Typical Transfer Characteristics –3 Gate to Source Voltage V (V) 2SK217 –0.4 –0.6 –0.8 –1 ( –2 – ...
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... Forward Transfer Admittance vs. Drain to Source Voltage kHz 0 5 Drain to Source Voltage V Input Capacitance vs. Drain to Source Voltage MHz 0.1 0.2 0.5 1.0 Drain to Source Voltage – 1 1.0 0.5 0.2 0.1 0. (V) DS Forward Transfer Admittance vs. ...
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... 30pF Variable Air 3 Copper Ribbon, Tin plated 10 mm Inside dia 4 Copper Ribbon, Tin plated 10 mm Inside dia. 2 2SK217 Power Gain vs. Drain to Source Voltage 100 MHz 5 10 Drain to Source Voltage V ( (V) 15 ...
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Hitachi Code MPAK JEDEC — EIAJ Conforms Weight (reference value) 0.011 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...