2SK2316 Sanyo Semicon Device, 2SK2316 Datasheet
2SK2316
Manufacturer Part Number
2SK2316
Description
Ultrahigh-Speed Switching Applications
Manufacturer
Sanyo Semicon Device
Datasheet
1.2SK2316.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2316
Manufacturer:
SANYO/三洋
Quantity:
20 000
Part Number:
2SK2316-TD
Manufacturer:
SANYO/三洋
Quantity:
20 000
Part Number:
2SK2316-TD-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : EN5300A
Features
• Low ON resistance.
• Ultrahigh-speed switching.
• Low-voltage drive (2.5V drive).
Specifications
Absolute Maximum Ratings
Electrical Characteristics
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
D-S Breakdown Voltage
G-S Breakdown Voltage
Zero-Gate Voltage
Drain Current
Gate-to-Source Leakage Current I GSS
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
V (BR)DSS
V (BR)GSS
I DSS
V GS(off)
R DS(on)
R DS(on)
Ciss
Coss
Crss
y fs
at Ta=25°C
Symbol
Symbol
at Ta=25°C
Ultrahigh-Speed Switching Applications
PW≤10µd, duty cycle≤1%
Mounted on ceramic board
(250mm
Tc=25°C
I D =1mA, V GS =0
I G =±100µA, V DS =0
V DS =16V, V GS =0
V GS =±8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =1A
I D =1A, V GS =4V
I D =1A, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
Conditions
Conditions
2
0.8mm)
Package Dimensions
unit: mm
2062A-PCP
11697YK (KOTO) TA-0121 No.5300-1/4
N-Channel Silicon MOSFET
[2SK2316]
±10
min
0.5
1.8
20
Ratings
Ratings
–55 to +150
140
200
170
145
2.8
typ
50
Continued on next page.
2SK2316
±10
150
1.5
3.5
max
20
100
±10
200
320
1.5
2
8
(Bottom View)
SANYO: PCP
1 : Gate
2 : Drain
3 : Source
Unit
Unit
mΩ
mΩ
µA
µA
°C
°C
pF
pF
pF
W
W
V
V
A
A
V
V
V
S
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2SK2316 Summary of contents
Page 1
... V DS =10V =1mA =10V =1A R DS(on =1A =4V R DS(on =1A =2.5V Ciss V DS =10V, f=1MHz Coss V DS =10V, f=1MHz Crss V DS =10V, f=1MHz N-Channel Silicon MOSFET 2SK2316 [2SK2316 Gate 2 : Drain 3 : Source SANYO: PCP (Bottom View) Ratings Unit 20 V ± ...
Page 2
... Continued from preceding page. Parameter Turn-ON Delay Time t d(on) Rise Time t r Turn-OFF Delay Time t d(off) Fall Time t f Diode Forward Voltage V SD Making : KP Switching Time Test Circuit 2SK2316 Symbol Conditions See specified Test Circuit =2A Ratings Unit min typ max ...
Page 3
... No.5300-3/4 ...
Page 4
... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 1997. Specifications and information herein are subject to change without notice. 2SK2316 No.5300-4/4 ...