2SK2340 Panasonic Semiconductor, 2SK2340 Datasheet
2SK2340
Manufacturer Part Number
2SK2340
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2340.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2340
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 3.6mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
L
= 5A, 1 pulse
DC
Pulse
T
Ta = 25°C
C
= 25°C
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
R
d(on)
r
f
d(off)
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
th(ch-c)
th(ch-a)
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
55 to +150
Ratings
= 1mA, V
= 5A, V
= 720V, V
= ±30V, V
= 25V, I
= 10V, I
= 25V, I
= 20V, V
= 10V, R
= 200V, I
900
±30
±10
150
±5
45
50
2
GS
Conditions
GS
D
D
D
GS
L
D
= 1mA
= 3A
= 3A
= 0
GS
DS
= 0
= 66.6
= 3A
= 0, f = 1MHz
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
min
900
1.5
3.2±0.1
2
7
1
9.9±0.3
2 3
1400
140
170
typ
3.5
60
30
60
60
2
5.08±0.4
1.45±0.15
2.54±0.2
0.75±0.1
1.2±0.15
max
62.5
100
2.8
2.5
±1
1.6
5
TO-220E Package
4.6±0.2
0.7±0.1
1: Gate
2: Drain
3: Source
2.9±0.2
2.6±0.1
unit: mm
°C/W
°C/W
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
A
A
1
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2SK2340 Summary of contents
Page 1
... Power F-MOS FETs 2SK2340 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply Absolute Maximum Ratings Parameter Symbol ...
Page 2
... Case temperature =25V DS T =25˚ Drain current I D 2SK2340 IAS L-load 100 T =25˚ 45mJ 1 0.3 0.1 0.1 0 L-load ( =25˚ =10A D 30 ...
Page 3
... Gate charge amount 100 Notes: R was measured at Ta=25˚C th and under natural convection. (1) without heat sink 10 (2) with 2mm Al heat sink 0 0.01 –4 –3 – 2SK2340 R t th(t) – Time (1) ( ...