2SK2341 NEC, 2SK2341 Datasheet

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2SK2341

Manufacturer Part Number
2SK2341
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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2SK2341
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2SK2341
Manufacturer:
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Document No.
Date Published January 1995 P
Printed in Japan
(O.D. No.
DESCRIPTION
tor designed for high voltage switching applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Storage Temperature
Channel Temperature
Single Avalanche Current
Single Avalanche Energy
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Low On-state Resistance
R
L
High Avalanche Capability Ratings
*PW
**Starting T
The 2SK2341 is N-channel Power MOS Field Effect Transis-
The diode connected between the gate and source of the
TC-2511
TC–8070)
OW
DS(on)
C
iss
= 0.26
10 s, Duty Cycle
C
ch
iss
= 25 C, R
= 1090 pF TYP.
MAX. (V
G
= 25
GS
C
a
1 %
= 25 C) P
= 25 C) P
= 10 V, I
, V
N-CHANNEL POWER MOS FET
GS
= 20 V
D
V
V
I
I
T
T
I
E
D (DC)
D (pulse)
AS
T1
T2
stg
ch
AS
DSS
GSS
= 6.0 A)
DATA SHEET
**
A
**
INDUSTRIAL USE
= 25 C)
–55 to +150
*
SWITCHING
0
MOS FIELD EFFECT TRANSISTOR
250
150
320
2.0
35
11
30
11
44
mJ
W
W
V
V
A
A
A
C
C
0.7 ± 0.1
2.54 TYP.
PACKAGE DIMENSIONS
Gate (G)
10.0 ± 0.3
1 2 3
1 2 3
MP-45F(SIOLATED TO-220)
(in millimeters)
2.54 TYP.
1.5 ± 0.2
1.3 ± 0.2
Source (S)
3.2 ± 0.2
Drain (D)
2SK2341
0.65 ± 0.1
Body diode
1. Gate
2. Drain
3. Source
4.5 ± 0.2
©
2.7 ± 0.2
2.5 ± 0.1
1995

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2SK2341 Summary of contents

Page 1

... DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications. FEATURES • Low On-state Resistance R = 0.26 MAX. (V DS(on) GS • 1090 pF TYP. OW iss iss • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage Gate to Source Voltage ...

Page 2

... G 6 1.0 F(S-D) 220 1.0 rr Test Circuit 2 : Switching Time D.U. PG Duty Cycle 1% ch 2SK2341 UNIT TEST CONDITIONS 250V ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ° 000 2SK2341 100 120 140 160 T - Case Temperature - °C C Pulsed Drain to Source Voltage - V 3 ...

Page 4

... PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2 1.0 100 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 5 4.0 3.0 2.0 1.0 100 – 2SK2341 = 62.5 °C/W = 3.57 °C °C C 100 1000 Pulsed 8 Gate to Source Voltage - ...

Page 5

... V - Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 1000 = 0 100 10 0.1 1000 0.1 REVERSE RECOVERY TIME vs. REVERSE DRAIN CURRENT 1000 100 0 30 0.1 Diode Forward Current - A 2SK2341 Pulsed 0.5 1.0 1 (off (on 125 1.0 10 100 ...

Page 6

... 100 Inductive Load - H 6 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 400 300 200 100 Starting T - Starting Channel Temperature - °C ch 2SK2341 V = 150 < 100 125 150 175 ...

Page 7

... Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. 2SK2341 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2341 M4 94.11 ...

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