2SK2353 NEC, 2SK2353 Datasheet

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2SK2353

Manufacturer Part Number
2SK2353
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No. TC-2499
Date Published November 1994 P
Printed in Japan
(O. D. No. TC-8047)
DESCRIPTION
tor designed for high voltage switching applications.
FEATURES
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (2SK2353/2354) V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
** Starting T
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
Low On-Resistance
2SK2353: R
2SK2354: R
Low C
High Avalanche Capability Ratings
Isolate TO-220 Package
iss
10 s, Duty Cycle
ch
C
DS(on)
DS(on)
= 25 ˚C, R
iss
= 670 pF TYP.
= 1.4
= 1.5
G
The information in this document is subject to change without notice.
c
a
= 25
(V
(V
= 25 ˚C)
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
GS
GS
= 10 V, I
= 10 V, I
, V
GS
= 20 V
DATA SHEET
INDUSTRIAL USE
D
D
V
I
I
P
P
T
T
I
E
A
= 2.5 A)
= 2.5 A)
D(DC)
D(pulse)
AS
DSS
GSS
T1
T2
ch
stg
AS
= 25 ˚C)
SWITCHING
2SK2353/2SK2354
–55 to +150 ˚C
0
450/500
MOS FIELD EFFECT TRANSISTOR
17.4
150
2.0
4.5
30
4.5
30
18
mJ
W
W
˚C
V
V
A
A
A
0.7 ±0.1
2.54
Gate
MP-45F (ISOLATED TO-220)
1
10.0 ±0.3.
PACKAGE DIMENSIONS
2 3
(in millimeters)
1.5 ±0.2
2.54
1.3 ±0.2
3.2 ±0.2
Source
Drain
1. Gate
2. Drain
3. Source
4.5 ±0.2
0.65 ±0.1
Body
Diode
©
2.7 ±0.2
2.5 ±0.1
1994

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2SK2353 Summary of contents

Page 1

... DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis- tor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2353 1.4 (V DS(on) 2SK2354 1.5 (V DS(on) • Low 670 pF TYP. iss iss • High Avalanche Capability Ratings • Isolate TO-220 Package QUALITY GRADE Standard Please refer to " ...

Page 2

... Q 1 Test Circuit 2 Switching Time D.U. PG Duty Cycle 2SK2353/2SK2354 TEST CONDITIONS 2SK2353 2.5 A 2SK2354 2 DSS ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 2SK2354 2SK2353 4 2 1000 0 V Pulsed 15 2SK2353/2SK2354 100 120 140 160 T - Case Temperature - ˚C c DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ...

Page 4

... PW - Pulse Width - s DRAIM TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 20 10 100 0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 4.0 3.0 2.0 1 –50 2SK2353/2SK2354 R = 62.5 ˚C/W th(ch- 4.17 ˚C/W th(ch- ˚C c Single Pulse 10 100 1 000 Pulsed 2 ...

Page 5

... V - Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 500 = 100 f 10 1.0 0.5 1000 0.1 1 Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 300 200 100 0 5 100 Q g 2SK2353/2SK2354 Pulsed 1.5 1 d(off) t d(on 100 100 4 ...

Page 6

... 17 100 125 Starting T - Starting Channel Temperature - ˚ SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD 100 4 1.0 0.1 100 1.0 m 150 175 L - Inductive Load - H 2SK2353/2SK2354 150 Starting T = 25˚ 100 m ...

Page 7

... Safe operating area of Power MOS FET. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2353/2SK2354 Document No. TEI-1202 IEI-1209 ...

Page 8

... Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. 2SK2353/2SK2354 M4 92.6 ...

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