2SK2356-Z NEC, 2SK2356-Z Datasheet

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2SK2356-Z

Manufacturer Part Number
2SK2356-Z
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2356-Z
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Part Number:
2SK2356-Z-E1
Manufacturer:
NEC
Quantity:
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Document No. D11391EJ3V0DS00 (3rd edition)
(Previous No. TC-2500)
Date Published March 1998 N CP(K)
Printed in Japan
DESCRIPTION
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (2SK2355/2356)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
** Starting T
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel
Low On-Resistance
2SK2355: R
2SK2356: R
Low C
High Avalanche Capability Ratings
PW
iss
10 s, Duty Cycle
ch
C
= 25 ˚C, R
DS(on)
DS(on)
iss
= 670 pF TYP.
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
= 1.4
= 1.5
G
c
a
The information in this document is subject to change without notice.
= 25
= 25 ˚C)
= 25 ˚C)
(V
(V
1 %
N-CHANNEL POWER MOS FET
GS
GS
= 10 V, I
= 10 V, I
, V
GS
= 20 V
DATA SHEET
INDUSTRIAL USE
D
D
A
V
V
I
I
P
P
T
T
I
E
= 2.5 A)
= 2.5 A)
D(DC)
D(pulse)
AS
= 25 ˚C)
DSS
GSS
T1
T2
ch
stg
AS
SWITCHING
–55 to +150 C
0
MOS FIELD EFFECT TRANSISTOR
450/500
17.4
150
1.5
5.0
50
5.0
30
20
mJ
W
W
V
V
A
A
A
C
MP-25Z (TO-220 SURFACE MOUNT TYPE)
0.75 ±0.1
1.3 ±0.2
1.0 ±0.3
4
2.54
Gate
PACKAGE DIMENSIONS
10.6 MAX.
(2.54) (2.54)
1 2 3
1 2 3
(10.0)
10.0
MP-25 (TO-220)
4
(in millimeter)
2.54
1.4 ±0.2
3.6 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
Source
Drain
0.5 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4.8 MAX.
4.8 MAX.
Body
Diode
©
1.3 ±0.2
2.8 ±0.2
1.3 ±0.2
0.5 ±0.2
1994

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2SK2356-Z Summary of contents

Page 1

... DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2355 1.4 (V DS(on) 2SK2356 1.5 (V DS(on) • Low 670 pF TYP. iss iss • High Avalanche Capability Ratings ...

Page 2

... Starting T Test Circuit 3 Gate Charge D.U. PG The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2355, 2SK2355-Z/2SK2356, 2SK2356 ˚C) A MIN. TYP. MAX. UNIT m R 0.9 1.4 DS(on) 1.0 1.5 V 2.5 3.5 V GS(off) ...

Page 3

... DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE –25 ° °C 75 °C 0.1 125 °C 0. Gate to Source Voltage - V GS 2SK2355, 2SK2355-Z/2SK2356, 2SK2356 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 20 0 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 8 ...

Page 4

... I - Drain Current - A D DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 3.0 2.0 1.0 0 0.01 0 Drain Current - 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z R th(ch- 2.5 °C/W th(ch- 100 Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3 Pulsed 2.0 1.0 100 0 V GATE TO SOURCE CUTOFF VOLTAGE vs. ...

Page 5

... V - Drain to Source Voltage - V DS REVERSE RECOVERY TIME vs. DRAIN CURRENT 5 000 di/ 000 100 50 0.1 1 Drain Current - A D 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.0 0 0.05 150 0 0 Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 500 = 0 t ...

Page 6

... 150 17 100 125 Starting T - Starting Channel Temperature - ° 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z SINGLE AVALANCHE CURRENT vs INDUCTIVE LOAD 100 5 1.0 0.1 100 150 175 150 Starting T = 25° ...

Page 7

... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z Document No. C11745E ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z M4 96.5 ...

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