2SK2359 NEC, 2SK2359 Datasheet

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2SK2359

Manufacturer Part Number
2SK2359
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Part Number
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Quantity
Price
Part Number:
2SK2359
Manufacturer:
NEC
Quantity:
10 000
Part Number:
2SK2359
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Part Number:
2SK2359-Z
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No. TC-2501
Date Published February 1995 P
Printed in Japan
(O. D. No. TC-8060)
DESCRIPTION
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage(2SK2359/2SK2360) V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
** Starting T
The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel
Low On-Resistance
Low C
High Avalanche Capability Ratings
2SK2359: R
2SK2360: R
iss
10 s, Duty Cycle
ch
C
= 25 ˚C, R
iss
DS(on)
DS(on)
= 1050 pF TYP
= 0.9
= 1.0
G
c
A
= 25
= 25 ˚C)
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
(V
(V
.
GS
GS
, V
= 10 V, I
= 10 V, I
GS
= 20 V
DATA SHEET
INDUSTRIAL USE
V
I
I
P
P
T
T
I
E
A
D(DC)
D(pulse)
AS
DSS
GSS
T1
T2
ch
stg
AS
D
D
= 25 ˚C)
SWITCHING
= 4.0 A)
= 4.0 A)
2SK2359/2SK2360
MOS FIELD EFFECT TRANSISTORS
–55 to +150 ˚C
0
450/500
150
1.5
7.0
75
17
7.0
30
28
mJ
W
W
˚C
V
A
A
A
V
0.75 ± 0.1
MP-25Z (SURFACE MOUNT TYPE)
1.3 ± 0.2
1.0 ± 0.3
4
2.54
PACKAGE DIMENSIONS
10.6 MAX.
(2.54) (2.54)
1 2 3
1 2 3
Gate
(10.0)
10.0
(in millimeters)
MP-25 (TO220)
4
2.54
1.4 ± 0.2
3.6 ± 0.2
Source
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
Drain
0.5 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
4.8 MAX.
4.8 MAX.
Body
Diode
©
1.3 ± 0.2
2.8 ± 0.2
1.3 ± 0.2
0.5 ± 0.2
1995

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2SK2359 Summary of contents

Page 1

... DESCRIPTION The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2359 0.9 DS(on) 2SK2360 1.0 DS(on) • Low 1050 pF TYP iss iss • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage(2SK2359/2SK2360) V ...

Page 2

... GD V 1.0 V F(S-D) t 300 1 Test Circuit 2 Switching Time D.U. PG Duty Cycle 1 % 2SK2359/2SK2360 TEST CONDITIONS 2SK2359 4.0 V 2SK2360 4 DSS ...

Page 3

... CASE TEMPERATURE 100 140 160 0 20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2SK2360 2SK2359 2 1 000 Pulsed 15 2SK2359/2SK2360 100 120 140 160 T - Case Temperature - ˚C C Pulsed Drain to Source Voltage - V 3 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 Pulsed 1.0 0.5 100 100 0 V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 4.0 3.0 2.0 1.0 0 100 –50 2SK2359/2SK2360 R = 83.3 ˚C/W th (ch- 1.67 ˚C/W th (ch- ˚C c Single Pulse 100 1 000 Pulsed 1 Gate to Source Voltage - V ...

Page 5

... Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 1 000 = 0 GS 100 10 1.0 1 000 0.1 1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 V 300 200 100 V DS 100 2SK2359/2SK2360 Pulsed 1.0 1 (on (off 100 100 - Drain Current - A ...

Page 6

... 100 125 Starting Tch-Starting Channel Temperature - ˚C 6 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 = 7 1.0 150 175 100 u 2SK2359/2SK2360 150 Starting ˚ 100 Inductive load - H ...

Page 7

... Safe operating area of Power MOS FET. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2359/2SK2360 Document No. TEI-1202 IEI-1209 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2359/2SK2360 M4 94.11 ...

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