2SK2371 NEC, 2SK2371 Datasheet

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2SK2371

Manufacturer Part Number
2SK2371
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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2SK2371
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Document No.
Date Published January 1995 P
Printed in Japan
(O.D. No.
DESCRIPTION
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
• Low C
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (2SK2371/2SK2372) V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
* PW
** Starting T
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
The diode connected between the gate and source of the transistor
TC-2505
TC-8064
2SK2367: R
2SK2368: R
iss
10 s, Duty Cycle
C
ch
iss
= 25 C, R
= 3600 pF TYP.
DS(ON)
DS(ON)
= 0.25
= 0.27
G
= 25
a
C
1 %
= 25 C)
= 25 C)
, V
(V
(V
N-CHANNEL POWER MOS FET
GS
GS
GS
= 20 V
= 13 V, I
= 13 V, I
DATA SHEET
A
= 25 C)
INDUSTRIAL USE
MOS FIELD EFFECT TRANSISTORS
V
I
I
P
P
T
T
I
E
D(DC)
D(pulse)
AS
0
T1
T2
ch
stg
AS
DSS
GSS
SWITCHING
D
D
= 10 A)
= 10 A)
2SK2371/2SK2372
–55 ~ +150
450/500
160
150
446
3.0
100
25
30
25
V
V
A
A
W
W
A
mJ
C
C
2.2 ± 0.2
PACKAGE DIMENSIONS
5.45
Gate
15.7 MAX.
1
MP-88
(in millimeters)
2
3
4
1.0 ± 0.2
5.45
Source
Drain
3.2 ± 0.2
0.6 ± 0.1
©
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Body
Diode
4.7 MAX.
1.5
2.8 ± 0.1
1995

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2SK2371 Summary of contents

Page 1

... DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2367 0.25 DS(ON) 2SK2368 0.27 DS(ON) • Low 3600 pF TYP. iss iss • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (T Drain to Source Voltage (2SK2371/2SK2372) V Gate to Source Voltage ...

Page 2

... F(S-D) t 500 rr Q 4.5 rr Test Circuit 2 Switching Time D.U. PG Duty Cycle 1% ch 2SK2371/2SK2372 UNIT TEST CONDITION 2SK2371 2SK2372 DSS ...

Page 3

... CASE TEMPERATURE 210 180 150 120 140 160 0 20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ° 000 2SK2371/2SK2372 100 120 140 160 T - Case Temperature - (° Pulsed Drain to Source Voltage - (V) 3 ...

Page 4

... PW - Pulse Width - (s) DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.5 1.0 0.5 1000 Gate to Source Voltage - (V) GS GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1000 – Channel Temperature - (°C) ch 2SK2371/2SK2372 = 25 °C 1000 Pulsed 100 150 ...

Page 5

... V - Source to Drain Voltage - (V) SD SWITCHING CHARACTERISTICS 1000 C iss 100 C oss C rss 1.0 1000 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 400 300 200 100 100 0 20 2SK2371/2SK2372 Pulsed 0.5 1.0 1 (off (on 150 1.0 10 100 ...

Page 6

... 150 V DD 400 300 200 100 100 125 Starting Tch - Starting Channel Temperature - (°C) 6 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 1.0 150 100 2SK2371/2SK2372 V = 150 100 Inductive load - (H) ...

Page 7

... Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. 2SK2371/2SK2372 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2371/2SK2372 M4 94.11 ...

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