2SK2380 Panasonic Semiconductor, 2SK2380 Datasheet
2SK2380
Manufacturer Part Number
2SK2380
Description
Silicon N-Channel Junction FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2380.pdf
(2 pages)
Silicon Junction FETs (Small Signal)
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
*
Marking Symbol
I
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
DSS
Low gate to source leakage current, I
Small capacitance of C
SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I
Features
Absolute Maximum Ratings
Electrical Characteristics
DSS
Runk
rank classification
(mA)
Parameter
Parameter
50 to 100
EBQ
Q
iss
, C
70 to 130
oss
EBR
, C
Symbol
V
V
I
I
P
T
T
Symbol
I
I
V
V
| Y
C
C
C
R
D
G
DSS
GSS
D
ch
stg
iss
oss
rss
GDO
GSO
DS
GSC
rss
fs
(Ta = 25°C)
*
|
(Ta = 25°C)
GSS
100 to 200
V
V
I
V
V
V
G
DS
GS
DS
DS
DS
55 to +125
EBS
Ratings
= 10 A, V
S
= 10V, V
= 20V, V
= 10V, I
= 10V, V
= 10V, V
125
125
±1
10
40
40
Conditions
D
GS
GS
GS
DS
= 1 A
DS
= 0
= 0, f = 1kHz
= 0, f = 1MHz
= 0
= 0
Unit
mW
mA
mA
°C
°C
V
V
Marking Symbol (Example): EB
1: Source
2: Drain
3: Gate
0.05
min
50
40
1
2
typ
0.4
0.4
0.4
1.3
1
SS-Mini Type Package (3-pin)
1.6±0.15
0.8±0.1
0.2±0.1
max
200
0.5
3
0.4
EIAJ: SC-75
3
unit: mm
Unit
mS
nA
pF
pF
pF
V
V
A
1
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2SK2380 Summary of contents
Page 1
... Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor Features Low gate to source leakage current, I Small capacitance iss oss SS-mini type package, allowing downsizing of the sets and auto- matic insertion through the tape/magazine packing. ...
Page 2
... 240 V =10V DS Ta=25˚C 200 160 I =100 A DSS 120 120 160 200 240 ( A ) Drain current I D 2SK2380 240 V =10V DS 200 160 120 80 40 25˚C Ta=75˚C –25˚C 0 –1.2 – 0.8 – 0 Gate to source voltage ...