2SK2380 Panasonic Semiconductor, 2SK2380 Datasheet - Page 2

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2SK2380

Manufacturer Part Number
2SK2380
Description
Silicon N-Channel Junction FET
Manufacturer
Panasonic Semiconductor
Datasheet
Silicon Junction FETs (Small Signal)
2
150
125
100
1.2
1.0
0.8
0.6
0.4
0.2
75
50
25
0
0
–1.2
0
Gate to source voltage V
Ambient temperature Ta ( ˚C )
20
– 0.8
40
| Y
P
60
fs
D
|
– 0.4
80
I
DSS
Ta
100
V
=100 A
GS
120
0
V
f=1kHz
Ta=25˚C
GS
DS
140
=10V
( V )
160
0.4
240
200
160
120
240
200
160
120
80
40
80
40
0
0
0
0
Drain to source voltage V
40
2
Drain current I
| Y
I
I
DSS
80
4
D
=100 A
fs
|
120
6
V
DS
I
160
D
D
8
( A )
V
GS
V
Ta=25˚C
Ta=25˚C
200
DS
10
DS
=0.4V
0.2V
0V
– 0.2V
– 0.4V
– 0.6V
=10V
( V )
240
12
240
200
160
120
80
40
1.2
1.0
0.8
0.6
0.4
0.2
0
–1.2
0
Gate to source voltage V
0
Drain to source voltage V
C
2
iss
– 0.8
, C
Ta=75˚C
I
4
oss
D
, C
– 0.4
6
V
rss
–25˚C
2SK2380
GS
8
V
0
25˚C
V
V
Ta=25˚C
f=1MHz
GS
DS
DS
DS
GS
10
=10V
=0V
C
C
C
iss
rss
oss
( V )
( V )
0.4
12

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