2SK2383 Panasonic Semiconductor, 2SK2383 Datasheet
2SK2383
Manufacturer Part Number
2SK2383
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SK2383.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2383
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Power F-MOS FETs
2SK2383
Silicon N-Channel Power F-MOS FET
*
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Contactless relay
Diving circuit for a solenoid
Driving circuit for a motor
Control equipment
Switching power supply
L = 2mH, I
Features
Applications
Absolute Maximum Ratings
Electrical Characteristics
Parameter
Parameter
L
= 13A, 1 pulse
DC
Pulse
T
Ta = 25°C
C
= 25°C
Symbol
V
V
I
I
EAS
P
T
T
Symbol
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
R
R
d(on)
r
f
d(off)
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
th(ch-c)
th(ch-a)
DSS
GSS
DSS
th
DSF
fs
(T
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
D
DR
DS
GS
DS
GS
DS
DS
DD
GS
55 to +150
Ratings
= 1mA, V
= 13A, V
= 400V, V
= ±30V, V
= 25V, I
= 10V, I
= 25V, I
= 20V, V
= 10V, R
= 150V, I
500
±30
±13
±26
170
100
150
3
Conditions
GS
D
D
D
GS
GS
L
D
= 1mA
= 7A
= 7A
GS
DS
= 0
= 21.4
= 0
= 7A
= 0, f = 1MHz
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
5.45±0.3
1.1±0.1
min
500
2.0±0.2
1
5
4.0
5˚
1
15.5±0.5
2
1700
0.45
300
120
210
typ
3
30
70
90
8
5.45±0.3
3.2±0.1
41.67
max
1.25
100
0.6
±1
5˚
1.7
5
TOP-3E Package
5˚
0.7±0.1
1: Gate
2: Drain
3: Source
3.0±0.3
5˚
unit: mm
5˚
5˚
°C/W
°C/W
Unit
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
A
A
1
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2SK2383 Summary of contents
Page 1
... Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching Low ON-resistance No secondary breakdown Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply Absolute Maximum Ratings Parameter Symbol ...
Page 2
... V =25V DS T =25˚ =0˚C C 25˚C 10 100˚C 8 150˚ Drain current I D 2SK2383 IAS L-load 100 T =25˚ 170mJ 3 1 0.3 0.1 0.1 0 L-load ( =25˚ =26A ...
Page 3
... Power F-MOS FETs 300 I =13A 250 200 V GS 150 100 Gate charge amount 2SK2383 3 ...