2SK2383 Panasonic Semiconductor, 2SK2383 Datasheet - Page 2

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2SK2383

Manufacturer Part Number
2SK2383
Description
Silicon N-Channel Power F-MOS FET
Manufacturer
Panasonic Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2383
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Power F-MOS FETs
2
0.01
100
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
10
8
6
4
2
0
0
1
0
0
Area of safe operation (ASO)
1
Drain to source voltage V
Gate to source voltage V
V
I
V
DP
D
GS
DS
=10V
2
=25V
1
Drain current I
T
C
4
=150˚C
R
2
100˚C
10
I
DS(on)
D
6
3
Non repetitive pulse
T
C
8
=25˚C
V
4
T
GS
10
C
100˚C
100
=150˚C
I
D
D
25˚C
0˚C
5
12
25˚C
( A )
0˚C
GS
DS
6
14
( V )
( V )
1000
16
7
120
100
80
60
40
20
16
14
12
10
0
6
5
4
3
2
1
0
8
6
4
2
0
0
0
0
Ambient temperature Ta ( ˚C )
Case temperature T
20
2
25
Drain current I
40
4
| Y
V
50
P
100˚C
60
D
6
th
fs
(1)
(2)
(1) T
(2) Without heat sink
|
25˚C
80 100 120 140 160
75
8
(P
Ta
T
C
=Ta
D
I
10
=3W)
C
100
D
D
150˚C
C
12
T
( A )
V
I
V
T
C
D
125
C
DS
DS
=0˚C
=1mA
( ˚C )
=25˚C
14
=25V
=25V
150
16
10000
1000
100
100
0.3
0.1
50
40
30
20
10
30
10
10
0
3
1
1
0.1
0
Gate to source voltage V
0
Drain to source voltage V
C
5
iss
40
0.3
IAS
, C
V
10
L-load ( mH )
oss
DS
80
, C
15
1
L-load
rss
V
120
2SK2383
GS
20
V
3
f=1MHz
T
T
T
160
GS
DS
C
C
C
25
DS
I
=25˚C
D
=25˚C
170mJ
=25˚C
=26A
6.5A
C
C
C
13A
oss
rss
iss
( V )
( V )
30
200
10

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